ISSN:
1432-0630
Keywords:
44.30
;
79.20
;
81.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Temperature profile evolutions produced by a scanning electron beam in crystalline silicon have been numerically calculated using a two-dimensional finite-element scheme. The temperature dependence of the different silicon properties as well as the electron penetration effects have been taken into account. Numerical calculations carried out at different conditions have been compared with experimental melting-threshold measurements using an electron beam with a Gaussian power density distribution. The good agreement between numerical calculations and experimental results proves the validity of the two-dimensional approach.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01567116
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