ISSN:
1432-0630
Keywords:
61.80.Jh
;
71.30.+h
;
79.20.Rf
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Cr layers (60–75 nm) on Al substrates and Cr2N layers (40–120 nm) on Al+3 wt.% Mg substrates were irradiated at 80 K and 300 K with 150–900 keV Xe-ions. The ion-beam-induced interface mixing was analyzed by means of Rutherford Backscattering Spectrometry (RBS). Both systems exhibit fairly small mixing rates, with those of Cr/Al being enhanced at 300 K target temperature, due to radiation-enhanced diffusion. The observed interface broadening is compared with predictions of ballistic and thermal spike mixing models. The low-temperature mixing rates in the system Cr/Al are underestimated by the ballistic model, but are rather well reproduced by local spike models. Mixing in the Cr2N/Al system at both temperatures, on the other hand, seems to be rather well described by the ballistic model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331443
Permalink
