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Laser-induced collisional processes in resonant laser ablation of GaAs (1992)

Wang, L. ; Ledingham, K. W. D. ; McLean, C. J. ; [et al.]

Springer

Applied physics 54 (1992), S. 71-75

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ISSN: 1432-0649

Keywords: 32.80−t ; 32.90.+a ; 79.20Ds ; 34.90.+q

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract The transitions between the multiplets of 42 P → 42 D and 42 P → 52 P in Ga have been studied by observing the ions produced in the ablation of a GaAs surface using a tunable dye laser. The asymmetric spectral profiles of the 42 P → 42 D transitions, and the large differences in laser power dependence of the ion yields for the different resonant schemes were observed and analysed. The experimental data are interpreted as resulting from laser-induced collisional processes, especially, from optical collisional excitation and energy-pooling ionisation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00331736

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