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  • Analytical Chemistry and Spectroscopy  (4)
  • stochastic approximation  (1)
  • stochastic processes with complete connections  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Computing 44 (1990), S. 159-168 
    ISSN: 1436-5057
    Keywords: reliability control ; computer simulation ; stochastic approximation ; stochastic processes with complete connections
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Description / Table of Contents: Zusammenfassung Diese Arbeit hat das Ziel, Simulation einiger stochastischer Prozesse zusammen mit stochastischer Approximation zu benützen, um eine optimale Zeitfolge für die Zuverlässigkeitskontrolle zu bestimmen. Wir zeigen überdies, daß der resultierende stochastische Kontrollplan adaptiv ist.
    Notes: Abstract The aim of this paper is to use the simulation of some stochastic processes combined with the stochastic approximation technique, to determine the optimum sequence of moments of time for the reliability control. It is shown that the obtained stochastic approximation control plan is adaptive.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: K-shell ionization cross-sections for Ni, Cu, Ge, Ag and Sn and L-shell ionization cross-sections for Sn, Au and Pb induced by α particles have been determined at 5.2, 16.5 and 27 MeV. Results have been compared with the predictions of the plane-wave Born approximation (PWBA) and binary encounter approximation (BEA).
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 15 (1986), S. 107-109 
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Measurements of the target-thickness dependence of the target K x-ray production yields are reported for 1 and 2 MeV/amu Sq+ (q = 6 and 8) ions incident upon thin solid targets of Ge. Target K x-ray production cross-sections were extracted in the limit of vanishing target thickness. Comparisons of the data with theoretical estimates based on combinations of direct ionization and electron-transfer processes are presented.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 8 (1979), S. 186-189 
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: K X-ray prodution cross-sections for S, Cl, K, Ni, Cu, Ga, Br, Ag and Cs and total L X-ray production cross-sections for Cs, W and Pb using α-particles of 11, 16, 21 and 27 MeV energy have been measured. The present results, combined with some earlier measurements, were compared with the theoretical predictions of the plane-wave Born approximation (PWBA), binary encounter approximation (BEA) and perturbed stationary state (PSS) approximation.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 12 (1983), S. 173-174 
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: K x-ray production cross-sections of Ag, Sn and Te by 32-80 MeV 32S ions have been measured. The dependence of target K x-ray yields on the target thickness was found to be negligible in the S (64 MeV) + Ag collision system. The experimental data are compared with some theoretical predictions.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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