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  • 1
    ISSN: 1432-069X
    Keywords: Langerhans cell ; Contact dermatitis ; Antigen processing ; 2,4-Dinitrofluorobenzene ; Antigen-presenting cell
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The cellular and subcellular distribution of 2,4-dinitrophenyl (DNP) groups in the epidermis and regional lymph nodes of the mouse was investigated after epicutaneous application of 2,4-dinitrofluorobenzene (DNFB) to sensitized and non-sensitized mice. The peroxidase-antiperoxidase method and the immunogold technique were used to visualize the DNP groups at both light and electron microscopic levels. The highest intensity of immunolabelling was found on tonofilaments of keratinocytes present in the upper layers of the epidermis. On the other hand, in vitro experiments showed that DNFB has the capacity to bind keratin which, together with immunocytochemistry, suggests that this molecule may be one of the skin protein carriers for DNFB. In addition, intense immunostaining for DNP was observed in the Golgi area of some epidermal Langerhans cells. Cells immunoreactive to DNP were also observed in the marginal sinus of cervical lymph nodes 6, 12 and 24 h after challenge. Immunoelectron microscopy revealed immunoreactive DNP groups in phagosomes of Langerhans cells at this site. The present findings support the hypothesis that the hapten DNFB penetrates passively into the cytoplasm of Langerhans cells, concentrates in the Golgi area and, during the migration of Langerhans cells to the lymph nodes, it is probably processed in the lysosomes before its presentation to T lymphocytes.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Analog integrated circuits and signal processing 8 (1995), S. 219-231 
    ISSN: 1573-1979
    Keywords: latch-up ; smart power ; CMOS technology ; design methodology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract To answer to the need of a cost effective smart power technology, an original design methodology that permits implementing latch-up free smart power circuits on a very simple CMOS/DMOS technology is proposed. The basic concept used to this purpose is letting float the wells of the MOS transistors most susceptible to initiate latch-up. The efficiency of the design methodology is experimentally shown.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Analog integrated circuits and signal processing 8 (1995), S. 233-246 
    ISSN: 1573-1979
    Keywords: smart power ; CMOS technology ; circuit design ; driving and protection functions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper intends to show that even with a CMOS technology main driving and protection functions of a power VDMOS can be made performant. Original circuits taking advantage of the availibility of the parasitic vertical bipolar transistor are presented and experimentally evaluated. A current mode approach is proposed to improve the accuracy of the current sensing function aimed at performing overcurrent, short-circuit and open-load detection.
    Type of Medium: Electronic Resource
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