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  • Built-in current sensor  (1)
  • Hydrido cluster  (1)
  • 1
    Digitale Medien
    Digitale Medien
    Synthesis and structural characterization of the hydrido carbido ruthenium cluster [PPh4][Ru6C(CO)16H] (1992)
    Springer
    Journal of cluster science 3 (1992), S. 489-497 
    Details
    ISSN: 1572-8862
    Schlagwort(e): Hydrido cluster ; ruthenium cluster ; interstitial carbido ligand ; crystallographic structure ; monoanionic cluster
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract According to the protonation of [PPh4]2[Ru6C(CO)16] (1b) withp-toluene-sulfonic acid, a hydrido ruthenium cluster [PPh4][Ru6C(CO)16H] (3b) was obtained in 53% yield, which readily decomposed in protic solvents even at −20°C to yield1b, Ru6C(CO)16H2, and Ru5C(CO)15. Cluster3b was characterized by single-crystal X-ray analysis. The six metal atoms are arranged in the form of an octahedron with the carbido ligand located in the center. There are 13 terminal carbonyl, three bridging carbonyl, and a bridging hydrido ligands.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00702754
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    A Low-Loss Built-In Current Sensor (1999)
    Springer
    Journal of electronic testing 14 (1999), S. 39-48 
    Details
    ISSN: 1573-0727
    Schlagwort(e): Built-in current sensor ; IDDQ testing ; low-voltage LSIs ; multiple power supplies
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Abstract This paper presents a novel built-in current sensor that uses two additional power supply voltages besides the system power supply voltage, and that is constructed by using a current mirror circuit to pick up an abnormal IDDQ. It is activated only by an abnormal quiescent power supply current and minimizes the voltage drop at the terminal of the circuit under test. Simulation results showed that it could detect 16-μA IDDQ against 0.03-V voltage drop at 3.3-V VDD and that it reduced performance degradation in the circuit under test. It is therefore suitable for testing low-voltage integrated circuits. Moreover, we verified the behavior of the sensor circuit implemented on the board by using discrete devices. Experimental results showed that the real circuit of the sensor functioned properly.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1008393104650
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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