ISSN:
0142-2421
Schlagwort(e):
SIMS, secondary ion mass spectrometry
;
electron affinity
;
high sensitivity
;
impurity
;
depth resolution
;
thin film
;
GaN
;
blue laser
;
DVD
;
digital video disk
;
MOCVD
;
metal organic chemical vapour deposition
;
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Physik
Notizen:
The improvement of the detection sensitivity of carbon in GaN thin films was investigated. Using the molecular ion CN- in SIMS, the secondary ion yields were increased greatly, and the detection limit was improved by more than two orders of magnitude. The reason for this is that the molecule CN has a high electron affinity of 3.82 eV and can easily be ionized to the CN- ion. The use of this molecular ion was also useful for other nitride films, such as Si3N4. These results suggest that the radicals having high electron affinity can be applied widely to the analysis of small amounts of impurities. © 1997 John Wiley & Sons, Ltd.
Zusätzliches Material:
5 Ill.
Materialart:
Digitale Medien
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