ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The geometrical structure of native silicon oxide and ultra thin thermal silicon oxides grown in situ on a Si(100) wafer have been investigated by surface extended x-ray absorption fine structure (SEXAFS) above the oxygen K absorption edge (∼530 eV). The Si—O bond length of the native oxide is identical with that of α-quartz and amorphous silica and the Si—O bond length of the thermal oxides corresponds closely to that of β-quartz which is the medium temperature modification of α-quartz.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740100505
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