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  • 1
    ISSN: 1432-1939
    Keywords: Key words Wood decomposition ; Coarse surface litter ; Tree mortality ; Carbon cycling models ; Global biogeochemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Decomposition rate constants were measured for boles of 155 large dead trees (〉10 cm diameter) in central Amazon forests. Mortality data from 21 ha of permanent inventory plots, monitored for 10–15 years, were used to select dead trees for sampling. Measured rate constants varied by over 1.5 orders of magnitude (0.015–0.67 year–1), averaging 0.19 year–1 with predicted error of 0.026 year. Wood density and bole diameter were significantly and inversely correlated with rate constants. A tree of average biomass was predicted to decompose at 0.17 year–1. Based on mortality data, an average of 7.0 trees ha–1 year–1 died producing 3.6 Mg ha–1 year–1 of coarse litter (〉10 cm diameter). Mean coarse litter standing-stocks were predicted to be 21 Mg ha–1, with a mean residence time of 5.9 years, and a maximum mean carbon flux to the atmosphere of 1.8 Mg C ha–1 year–1. Total litter is estimated to be partitioned into 16% fine wood, 30% coarse wood, and 54% non-woody litter (e.g., leaves, fruits, flowers). Decomposition rate constants for coarse litter were compiled from 20 globally distributed studies. Rates were highly correlated with mean annual temperature, giving a respiration quotient (Q 10) of 2.4 (10°C–1).
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-1979
    Keywords: SOI Technology ; CMOS circuits ; LVLP mixed-mode ; RF components
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isolation, FD SOI MOSFETs indeed exhibit near-ideal body factor, subthreshold slope and current drive. These assets are both theoretically and experimentally investigated. Original circuit studies then show how a basic FD SOI CMOS process allows for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS. Experimental circuit realizations support the analysis.
    Type of Medium: Electronic Resource
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