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  • 1985-1989  (2)
  • 78.55DS  (1)
  • Compensation point (CO2)  (1)
  • 1
    ISSN: 1432-2048
    Schlagwort(e): Carboxylation efficiency ; Compensation point (CO2) ; Photosynthesis (temperature, humidity) ; Sclerophyll ; Transpiration
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Abstract The effect of temperature on photosynthesis at constant water-vapor pressure in the air was investigated using two sclerophyll species, Arbutus unedo and Quercus suber, and one mesophytic species, Spinacia oleracea. Photosynthesis and transpiration were measured over a range of temperatures, 20–39° C. The external concentration of CO2 was varied from 340 μbar to near CO2 compensation. The initial slope (carboxylation efficiency, CE) of the photosynthetic response to intercellular CO2 concentration, the CO2 compensation point (Γ), and the extrapolated rate of CO2 released into CO2-free air (R i) were calculated. At an external CO2 concentration of 320–340 μbar CO2, photosynthesis decreased with temperature in all species. The effect of temperature on Γ was similar in all species. While CE in S. oleracea changed little with temperature, CE decreased by 50% in Q. suber as temperature increased from 25 to 34° C. Arbutus unedo also exhibited a decrease in CE at higher temperatures but not as marked as Q. suber. The absolut value of R i increased with temperature in S. oleracea, while changing little or decreasing in the sclerophylls. Variations in Γ and R i of the sclerophyll species are not consistent with greater increase of respiration with temperature in the light in these species compared with S. oleracea.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1432-0630
    Schlagwort(e): 78.55DS ; 61.80Jh ; 71.35 +z
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We report on a photoluminescence study of silicon samples subjected to different dry etching processes. Several luminescence lines, known from defects produced by high-energy irradiation, manifest damage of the crystalline material. Noble gas ion beam etching (using Ne+, Ar+, Kr+, and Xe+) with ion energies as low as 400 eV produces characteristic luminescence lines which correspond to defects within a 200–300 Å thick surface layer. Incorporation of carbon during CF4 reactive ion etching produces the familiar G-line defect. The G-line photoluminescence intensity in our samples is directly correlated with the substitutional carbon concentration, as determined by infrared absorption measurements before the etch process; we therefore suggest that a simple method to determine the substitutional carbon concentration in a crystalline silicon sample is a standard dry etching process and a comparison of the resulting G-line photoluminescence intensity to a calibrated sample. The sensitivity of this method seems to be better than 1014 carbon atoms/cm3.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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