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Magnetostriction of Si-doped YIG at low temperatures (1973)

Mack, D. R. ; Smit, J.

Springer

Applied physics 2 (1973), S. 23-25

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ISSN: 1432-0630

Keywords: Magnetostriction ; Ferrous ions ; Electron hopping

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The magnetostriction of Fe2+ ions introduced by Si4+ in YIG, has been measured at low temperatures by means of strain gauges. It is substantially larger at 77°K than at 4°K. This is explained by electron migration at elevated temperatures, leading to a decrease in perturbing potential of the Si ions by a factor two.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00900487

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