ISSN:
0392-6737
Keywords:
Growth from vapor
;
Fatigue, brittleness, fracture and cracks
;
Transmission and absorption
;
Other crystalline inorganic semiconductors
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary Single crystals of copper indium disulfide (CuInS2) have been grown by chemical-vapour transport technique (CVT) using iodine as the transporting agent. The obtained phase was checked by X-ray diffractometry and the presence of copper, indium and sulfur in the grown crystals was confirmed by Energy-Dispersive Spectrum Analysis (EDSA). The mechanical properties of the grown crystals were studied using microindentation analysis. Optical-transmission measurements were done to determine the energy gap of the grown crystals. The four-probe technique was used to measure the electrical properties of the grown crystals. The as-grown crystals were found to bep-type conducting and they were converted ton-type by suitable annealing treatment. The electrical parameters of bothn- andp-type crystals were measured.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02451810
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