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  • Industrial Chemistry and Chemical Engineering  (2)
  • 1
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Applied Organometallic Chemistry 5 (1991), S. 319-323 
    ISSN: 0268-2605
    Keywords: OMPVE ; epitaxy ; AlGaAs ; source gas ; trimethylaluminum ; impurity ; purification ; HEMT ; Chemistry ; Industrial Chemistry and Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Highly purified trimethylaluminum [(CH3)3Al] was prepared by reducing the contamination of volatile impurities such as organic silicon and dimethyl-aluminum methoxide [(CH3)2AlOCH3]. The concentration of methoxy group in (CH3)3Al was found to decrease considerably when (CH3)2Al was distilled in the presence of aluminum trihalide. Among the halides, purification efficiency increased in the order I〉Br〉Cl.High-quality AlGaAs layer and AlGaAs/GaAs modulation doped structures were grown by organometallic vapor-phase epiloxy (OMVPE) using the purified (CH3)3Al. Their electrical properties were discussed in relation to the volatile impurity in the source gas.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Applied Organometallic Chemistry 5 (1991), S. 331-336 
    ISSN: 0268-2605
    Keywords: Molecular orbital ; calculation ; MOCVD ; source gas ; alkylarsine ; β-elimination ; Chemistry ; Industrial Chemistry and Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Semi-empirical molecular orbital calculations were carried out for the compounds (C2H5)3As, (C2H5)3Ga and RAsH2 (R = C2H5, i-C3H7, i-C4H9, and t-C4H9) by using the CNDO/2-U program, and their capability of β-elimination reaction is compared on the basis of the torsion energy to the transition state, electrostatic interactions and orbital overlapping between the central atom and the β-hydrogen, and bond order of the metal-carbon, and carbon-hydrogen bond. In the comparison of (C2H5)3As with (C2H5)3Ga, we found that the β-elimination of (C2H5)3As could hardly be expected to take place in the thermal decomposition. The capability of β-elimination would be smaller in C2H5AsH2 than that in (C2H5)3As. Moreover when the ethyl group is replaced by a t-butyl group in RAsH2, the β-elimination reaction appears to become more difficult and a large possibility for a radical process is suggested.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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