ISSN:
1432-0630
Schlagwort(e):
PACS: 68.55; 81.15 Z
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract. High-quality epitaxial CeO2 thin films were obtained on Si(001) buffered with a yttria-stabilised zirconia layer by pulsed laser deposition. Although the best structural properties were achieved at high substrate temperature, high-quality epitaxy was obtained even at room temperature. Epitaxial growth at low temperature is promoted by the high kinetic energy of particles reaching the substrate. The oxygen pressure and target–substrate distance had a strong influence on the crystallographic structure and surface morphology in low-temperature deposition. This behaviour is attributed to a change in the kinetic energy of the particles, which was evaluated from the plasma expansion velocity determined by an intensified CCD camera. If a shock wave forms, a minimum substrate temperature of 550 °C is necessary for epitaxial growth.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/s003390051537
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