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  • PACS: 72.80; 61.72.Tt  (1)
  • PACS: 78.65; 61.80J  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    Generation of optical contrast in insulating materials by irradiation with focused ion beams (2000)
    Springer
    Applied physics 71 (2000), S. 565-569 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 78.65; 61.80J
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. The optical properties of crystalline insulating materials can markedly be modified by irradiation with energetic ions. The exposed areas of such materials absorb and reflect light more strongly than non-irradiated ones. In this way, optical contrast is created. With modern equipment, ion beams of sufficient intensity can be focused to submicron dimensions. Thus, both analog and digital information can be recorded with pixel densities of Gbit/cm2 to Tbit/cm2. In particular, crystalline films of group-IV elements of the periodic system, such as Si, SiC and CD (diamond), are best suited for this novel ionographic process. The physical foundations of this technology and the resulting properties of the recorded data will be discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390000625
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Ion-implantation doping of crystalline 6H-SiC (1995)
    Springer
    Applied physics 61 (1995), S. 363-367 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 72.80; 61.72.Tt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract.  The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 1017 ions/cm3 of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal order was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in 〈0001〉-direction, maximum electrical activity of all dopants was observed within the range of 3–80% at room temperature. Impurity ionization levels were derived from conductivity measurements in the temperature range between 300–80 K, which also indicate the presence of compensating defects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01540109
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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