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  • PACS. 71.10.Ca Electron gas, Fermi gas – 71.35.-y Excitons and related phenomena  (1)
  • PACS. 73.21.Fg Quantum wells  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 22 (2001), S. 89-98 
    ISSN: 1434-6036
    Keywords: PACS. 73.21.Fg Quantum wells
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We present a new variationnal method for calculating the ground state energy of an electron bound to an impurity located in a quantum well. This method relies on an envelope function which is determined exactly from a formal minimization procedure. The obtained energies are lower by as much as 10% than the ones found by the widely used free electron envelope function. Their large width limits are reached with exponentially small corrections as they should. We also find that, except for narrow wells, the shape of these exact envelope functions strongly depends on the impurity position, being consequently quite different from the usual free electron ones. In order to discuss the improvements brought by our new procedure in the most striking way, we have used a model semiconductor quantum well with infinite barrier height and simplified band structure. Extensions can be made to finite barrier and more realistic band structures, following the same technique.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 31 (2003), S. 305-309 
    ISSN: 1434-6036
    Keywords: PACS. 71.10.Ca Electron gas, Fermi gas – 71.35.-y Excitons and related phenomena
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Recently, we have derived the changes in the absorption spectrum of an exciton when this exciton is photocreated close to a metal. The resolution of this problem - which has similarities with Fermi edge singularities - has been made possible by the introduction of “exciton diagrams” in which the exciton metal-electron vertex has been essentially guessed. The validity of this procedure relied on a dreadful calculation based on standard free electron and free hole diagrams, with the semiconductor-metal interaction included at second order only, and its guessed extention to higher orders. Using a commutation technique similar to the one we recently introduced to deal with interacting excitons, we are now able to prove that this exciton diagram procedure we proposed is indeed valid for this problem at any order in the interaction.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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