ISSN:
1432-0630
Schlagwort(e):
PACS4077, 6170T, 6180J
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract. $^1$ H diffusion in crystalline Si has been measured in the temperature range of 50–220 K. The temperature dependence of the diffusion coefficient follows a power law of the type $D\propto T^{\rm{n}}$ , $n=5.6\pm0.3$ . D( $^1$ H) values range between 10 $^{-18}$ – $10^{-14}$ cm $^2$ /s up to about 200 K, where a transition to thermally activated diffusion is indicated. The low-temperature transport mechanism is attributed to tunneling.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/s003390050466
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