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  • 1
    Electronic Resource
    Electronic Resource
    Electron-stimulated desorption total cross-section determination for digermane on Si(100) (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 105-108 
    Details
    ISSN: 0142-2421
    Keywords: ESD ; Si(100) ; electron-stimulated desorption ; silicon ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have studied digermane-covered Si(100) using electron-stimulated desorption (ESD). Estimates are presented for the total H(a) ESD removal cross-section for digermane-exposed Si(100) substrates at 85 K using electrons incident at 150 eV energy. It is found that electron-enhanced deposition of Ge occurs only when physisorbed digermane is present. Auger electron spectroscopy provided the means for determining the relative amounts of germanium adsorbed on the Si(100) surface following digermane exposures, electron irradiation and surface reconstruction. It is found that two coverage regimes are important: initial dosing of digermane on Si(100) at 85 K results in overlayers consisting of both physisorbed digermane and chemisorbed GeHx(a) (x=1, 2 or 3) species; and short anneals to 200 K following exposure of the Si(100) surface at 85 K lead to the presence of only chemisorbed GeHx(a). The two coverage regimes exhibit different ESD behavior. Two kinetic energy distribution (KED) peaks are seen when physisorbed digermane is present, and only one when it is absent. The ESD signal decay curves obtained from the two surfaces are also different: the presence of physisorbed digermane results in a two-component exponential signal decay; the absence of the physisorbed species results in a single-exponential decay. The total H removal cross-section from the physisorbed digermane overlayer was determined to be σ∽1.4×10-15 cm2, while that from Si(100) with only adsorbed GeHx present was found to be σ∽2.6×10-16 cm2. Our results suggest that adsorbed GeHx(a) species remain intact on the surface even when the Si(100) substrate is annealed to 200 K, indicating that hydrogen migration from surface GeHx(a) to Si surface sites does not occur at 200 K. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    Effect of impurities on emulsion polymerization: Case II kinetics (1988)
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 35 (1988), S. 2009-2021 
    Details
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effects of water-soluble and monomer-soluble impurities on the kinetics of emulsion polymerization of monomers following Case II kinetics (e.g., styrene) are investigated. Experimental studies reveal that impurities can have an appreciable effect on both polymer particle nucleation and growth. These effects are shown to be well predicted by a mathematical model.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/app.1988.070350803
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of low-energy electron irradiation on submonolayer ammonia adsorbed on Pt(111) (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 97-104 
    Details
    ISSN: 0142-2421
    Keywords: ammonia ; Pt ; adsorption ; electron irradiation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The effects of electron impact on ammonia-covered Pt(111) have been studied using temperature-programmed desorption (TPD) and electron-stimulated desorption (ESD). For coverages below one monolayer, ammonia adsorbs on the surface in two distinct TPD states: the α-state is broad and desorbs over the temperature range 150-350 K, and the β-state appears as a sharper peak at 150 K. The β-state was seen to be damaged by electron-beam impact much more readily than the α-state, resulting in the formation of atomically adsorbed N on the surface. The mass 28 recombinative nitrogen desorption TPD peak appearing at 550 K exhibited second-order desorption kinetics, further confirming the presence of atomically adsorbed nitrogen. The ESD kinetic energy distributions (KEDs) were obtained for m/e=1 amu, which exhibited broad peaks generally. The H+ KEDs were analyzed using empirical curve fits, with the resulting conclusion that the H+ KEDs contain contributions from at least three different hydrogen-containing surface species. We believe that these three H+ KED peaks are due to ESD from adsorbed NH3, NH2 and H. The ESD cross-section for NH3 removal was measured in three different ways, all of which were found to be in general agreement, and which gave an averaged cross-section value of Qtot=4×10-17 cm2. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
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