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  • 1
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 464-468 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The lifetime of the electrochromism of the WO3-TiO2 films prepared by vacuum evaporation is found to exceed that of WO3 films by a factor of five. X-ray diffraction has revealed that the crystal structure of WO3-TiO2 films stays amorphous, while crystalline compounds are formed in amorphous WO3 films after colouring and bleaching. WO3-TiO2 films stay amorphous after they are annealed at 400°C, although WO3 films crystallize. SIMS and XPS analyses have revealed that half the amount of lithium injected during a colouring cycle is stored as O—Li bonds in the bleached film. In WO3-TiO2 films the number of bonds such as W—OH and W=O in which lithium ions accumulate is reduced. We conclude that the lifetime of the electrochromism is prolonged for amorphous WO3-TiO2 films, because lithium does not accumulate and the WO3-TiO2 films stay amorphous.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Round-robin experiments have been performed to correct binding energy shifts of XPS spectra for oxides by charge-up which results from irradiation of x-rays or ion sputtering and to determine criteria for the change of chemical state resulting from Ar ion sputtering. Al2O3, SiO2, MgO, TiO2 and NiO, in plate and powder form, were used for the experiments. We have revealed that the binding energy difference between the Al 2p (Si 2p or Mg 1s) line and the O 1s line gives a better correction for the measurements of Al2O3 (SiO2 or MgO) than that between the Al 2p (Si 2p and Mg 1s) line and the C 1s line. After Ar ion sputtering, TiO2 and NiO are reduced and new components appear in the XPS spectra. For Al2O3 and SiO2, the damage is induced by sputtering and the full width at half-maximum (FWHM) values of XPS spectra increase, while MgO is unchanged. We have shown that the changes of oxides caused by ion sputtering depend on the change of free formation enthalpy and ionicity. We have also shown that both plate and powder samples are useful as standards to determine the binding energy from XPS spectra.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Results are reported of the second phase of joint research on ion sputtering that was conducted by the Iron and Steel Institute of Japan. Various effects on sputtering yields were studied in detail, and the yields for Ni and Zn were determined by analysing the depth profile of electrodeposited steel sheets with an Auger electorn spectrometer, Ar+ ions were used as the bombarding species, and a Faraday cup, which was fitted with a front plate incorporating a small hole in the centre for the ions to pass through, was used to measure the electric current of the incident ions. To calculate the ion current density, a correction for the effective transmittance efficiency of the hole was made according to its cross-sectional shape. The sputtering yields determined in several laboratories by using this correction agreed with each other better than those obtained in the first phase of the work. The angular dependence and energy dependence of the sputtering yields for Ni and Zn were measured.A standard procedure is proposed for the measurement of ion sputtering yields to analyse depth profiles, including methods to measure the ion current, to calculate the current density, to optimize the sample position and to tune lenses of the ion gun.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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