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  • Polymer and Materials Science  (37)
  • 1
    Electronic Resource
    Electronic Resource
    Integrierte Netzplantechnik. O. Reichert. 1. Aufl. (1977). 214 S., 43 Abb., und 9 Tafeln, Verlag Chemie Weinheim, New York, Kunststoffeinband DM 38,- (1979)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 30 (1979), S. 89-89 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19790300120
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  • 2
    Electronic Resource
    Electronic Resource
    Reibung und Verschleiß. Mechanismen - Prüftechnik - Werkstoffeigenschaften. Hrsg. K.-H. Zum Gahr. 244 S., zahlr. Abb. Alphabetisches Stichwortverzeichnis. DGM Informationsgesellschaft mbH, Oberursel 1983. Geb., 16 × 23,5 cm. ISBN 3-88355-064-7. DM 87,- (1984)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 35 (1984), S. 318-318 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19840350608
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation behavior of CrNx and (Cr,Al)Nx hard coatings (1990)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 41 (1990), S. 756-760 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Oxidationsverhalten von Hartstoffschichten aus CrNx und (Cr,Al)NxDurch reaktives Magnetron-Sputtering hergestellte Nitrid-Hartstoffschichten aus CrNx und (Cr,Al)Nx wurden in Luft bei Temperaturen zwischen 500°C und 900°C bis zu 16 Stunden lang oxidiert. Ursprüngliche und oxidierte Proben wurden durch Auger-Elektronenspektroskopie, Rasterelektronenmikroskopie und Röntgenbeugung untersucht. Die Ergebnisse zeigen, daß die Oxidation von Beschichtungen aus CrNx durch das Wachstum einer Chromoxidschicht gekennzeichnet ist, das durch Diffusion von Cr aus der Nitridschicht bestimmt wird. Unterhalb der Oxidschicht entsteht eine an Cr verarmte und mit N angereicherte Schicht. Beschichtungen mit dem ternären (Cr,Al)Nx sind bei allen Temperaturen zwischen 500°C und 900°C etwa fünfmal mehr oxidationsbeständig, als solche aus CrNx. Die Oxidschicht auf (Cr,Al)Nx zeigt eine ausgeprägte Variation der Zusammensetzung mit der Tiefe. Diese kann im wesentlichen durch das Vorherrschen einer äußeren Cr-reichen (Cr,Al)-Oxidschicht gedeutet werden, die sich nach innen zu in einer Al-angereicherten (Cr,Al)-Oxynitridschicht fortsetzt. Im Gegensatz zu CrNx findet man eine breite Interdiffusionszone von N und O. In beiden Fällen wird der Oxidationsvorgang hauptsächlich durch die Diffusion von Cr bestimmt.
    Notes: Reactively magnetron-sputtered CrNx and (Cr,Al)Nx hard costings were oxidized in air at temperatures between 500°C and 900°C for periods up to 16 h. The original and the oxidized samples were characterized by scanning electron microscopy, X-ray diffraction and scanning Auger electron spectroscopy. The results show that CrNx coatings oxidize by growth of chromium oxide layer on top of the coating governed by outward diffusion of Cr. Below the oxide layer, a Cr-depleted and N-enriched intermediate nitride layer is left. The ternary (Cr,Al)Nx nitride coating is about five times more oxidation resistant than CrNx at all temperatures between 500°C and 900°C. The oxide layer on (Cr,Al)Nx shows a strong variation in composition with depth, which can be interpreted as a main oxide layer of a Cr-rich (Cr,Al) oxide followed by an Al-enriched (Cr,Al) oxynitride. In contrast to CrNx, a wide interdiffusion zone of N and O is found. In both cases the oxidation process is mainly controlled by Cr diffusion.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19900411222
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  • 4
    Electronic Resource
    Electronic Resource
    Augerspektroskopische Untersuchungen zur Lochkorrosion von Fe-Cr-, Fe-Mo- und Fe-Cr-Mo-LegierungenHerrn Professor Dr. K. E. Heusler zum 60. Geburtstag gewidmet (1991)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 42 (1991), S. 169-178 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Auger-spectroscopic investigations into pitting corrosion of FeCr, FeMo and FeCrMo alloysA single pit was produced on binary iron-chromium (Fe17Cr), iron-molybdenum (Fe1Mo, Fe3Mo, and Fe5Mo) and ternary iron-chromium-molybdenum alloys (Fe17CrxMo, x = 1, 3, 7 wt.%) in 0.5 M H2SO4 with Cl- additions (0.02 to 0.08 molar) at room temperature. Compositional changes at the bottom of the pit and in the surrounding passive film were determined using high resolution Auger-Electron Spectroscopy (AES). The chromium and molybdenum content of the passive layers are not changed in the presence of Cl- and there is no incorporation of chlorine in the passive film as long as the films were formed in a chlorine-free electrolyte and Cl- was added later. At the bottom of the pits salt films could be determined in all cases after removing the electrolyte with filter paper. These salt films are strongly enriched in chromium, molybdenum and chlorine. The salt film was not detectable for Fe-Cr after rinsing the samples with distilled water, whereas in the case of molybedenum additions the salt film could not be washed away with water.
    Notes: Ein einzelnes Loch wurde auf der passiven Oberfläche von Eisen-Chrom-(Fe17Cr), Eisen-Molybdän-(Fe1Mo, Fe3Mo und Fe5Mo) und ternären Eisen-Chrom-Molybdän-Legierungen (Fe17CrxMo, x = 1, 3, 7 Gew.%) durch Lochkorrosion in 0,5 M H2SO4 mit Cl--Zusätzen von 0,02 und 0,08 Mol/l bei Raumtemperatur erzeugt. Die Zusammensetzung des Lochbodens und der umgebenden Passivschicht wurde mit Hilfe der hochauflösenden Augerelektronenspektroskopie (AES) bestimmt. Der Chrom- und Molybdängehalt des Passivfilmes wird durch die Anwesenheit der Cl--Ionen nicht verändert, und es wird kein Chlor in den Passivfilm eingebaut, solange der Film in chloridfreiem Elektrolyt gebildet und Cl- später zugesetzt wurde. Auf dem Lochboden konnten in allen Fällen Salzfilme festgestellt werden, nachdem der Elektrolyt mit Filterpapier aufgesogen wurde. Diese Salzfilme waren stark mit Chrom, Molybdän und Chlor angereichert. Bei der Fe-Cr-Legierung konnte der Salzfilm nach Spülung mit Wasser nicht mehr nachgewiesen werden, während bei den molybdänhaltigen Legierungen der Salzfilm mit Wasser nicht entfernt werden konnte.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19910420405
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of the atomic mixing layer in sputter profiling of Ta/Si multilayers by TEM and AES (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 794-796 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Sputter-deposited multilayers of Si and Ta with a nominal period length of a double layer (Ta + Si) of 20 nm were studied with AES depth profiling and with transmission electron microscopy (TEM). The asymmetric shape of the measured Si layer profiles was fitted to model calculations based on preferential sputtering of Si and an atomic mixing zone length of 4 nm for 3 keV Ar+ ions at a 36° incidence angle. TEM images of cross-sections of the original sample show sharp Si/Ta and Ta/Si interfaces, with a width of ∼ 0.5 nm. The atomic mixing zone length of the sputter-profiled sample was observed directly by TEM and was determined to be 4.0 nm, in accordance with the AES profile evaluation. It is concluded that the observed asymmetric broadening of the shape of the measured AES sputtering profiles is due mainly to atomic mixing and is enhanced by preferential sputtering of Si.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740151214
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  • 6
    Electronic Resource
    Electronic Resource
    Quantitative evaluation of AES-depth profiles of thin anodic oxide films (Ta2O5/Ta, Nb2O5/Nb) (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 210-216 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Thin films of anodically formed Ta2O5 and Nb2O5 on polycristalline Ta and Nb, respectively, are analysed with AES during sputtering with Ar+ ions at energies between 0.5 keV and 5 keV. A sputtering induced depletion of oxygen at the surface is observed in both oxides. The kinetics of this depletion and the steady-state composition at the surface of the samples are studied as a function of the primary ion energy. The results are interpreted using a modification of the model of Ho et al. (1976) for the preferential sputtering of alloys. The thickness of the transient layer increases non-linearly from 1.6 to 3.4 nm with increasing ion energy. Below 2 keV, the surface depletion of oxygen increases with decreasing ion energy and is constant above 2 keV up to 5 keV. The results are similar for both oxides. At 2 keV, the minimum measured width of the oxide/metal interface is 2 nm for Ta2O5/Ta and is about two times larger for Nb2O5/Nb. In both cases it increases with the square root of the ion energy and it is independent on the oxide layer thickness between 10 nm and 150 nm.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050507
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of depth resolution parameters from AES sputtering profiles of multilayer structures with varying single layer thicknesses (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 335-336 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740160171
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  • 8
    Electronic Resource
    Electronic Resource
    Alternative model multilayer structures for depth profiling studies (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 50-54 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: There exists a permanent need for new model systems appropriate for the study of depth profiling with different surface analysis techniques, e.g. AES, XPS and SIMS, which involves the ion sputtering process. The development, preparation, transmission electron microscopy (TEM) characterization and AES depth profiling behaviour of the following new multilayer structures are presented: metal/oxide and oxide/oxide multilayers composed of Ni, Cr, NiO and Cr2O3 thin films and metal/semiconductor multilayers composed of Ni, Cr and Si thin films. These multilayer structures were sputter deposited on smooth silicon substrates and were precisely characterized with AES depth profiling during sample rotation and (two of them) with TEM. The measured compositional depth profiles are explained with respect to the influence of cystalline and amorphous structures on depth resolution, and the advantages of each type of multilayer structure are discussed.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190112
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  • 9
    Electronic Resource
    Electronic Resource
    Grain boundary segregation in [100] symmetrical tilt bicrystals of an Fe—Si alloy (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 601-606 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The orientation and temperature dependences of the segregation of P, Si and C at [100] symmetrical tilt grain boundaries of an Fe-3.5 at.% Si alloy were determined by AES analysis of in situ fractured bicrystals. The obtained anisotropy of the segregation enthalpy of all three elements is characterized by its low absolute values for the {013} and {012} boundaries. Both of these boundaries belong to the low classification levels after Paidar and possess high values of interplanar spacing which can be used as a simple geometric criterion of the boundary ‘specialty’. The data are consistent with the construction of the grain boundary segregation diagram showing the dependence of the segregation enthalpy on both the boundary orientation and the maximum solid solubility of the solute.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401901112
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative AES Analysis of Fracture Surfaces in the Presence of O- and C-containing Residual Gas (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 263-270 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The chemical composition of thin segregation layers is calculated using elemental Auger spectra and considering the adsorption of residual gas components during analysis. We take into account that the coverage with oxygen is different for the different elements in the thin layer and that the shape of the Auger peaks is changed by the coverage. Application of the method is demonstrated for quantitative analysis ofin situfractured grain boundaries of B-doped Ni3Al bicrystals.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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