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  • 1
    Electronic Resource
    Electronic Resource
    High-sensitivity SIMS analysis of carbon in GaN films by molecular ion detection (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 966-969 
    Details
    ISSN: 0142-2421
    Keywords: SIMS, secondary ion mass spectrometry ; electron affinity ; high sensitivity ; impurity ; depth resolution ; thin film ; GaN ; blue laser ; DVD ; digital video disk ; MOCVD ; metal organic chemical vapour deposition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The improvement of the detection sensitivity of carbon in GaN thin films was investigated. Using the molecular ion CN- in SIMS, the secondary ion yields were increased greatly, and the detection limit was improved by more than two orders of magnitude. The reason for this is that the molecule CN has a high electron affinity of 3.82 eV and can easily be ionized to the CN- ion. The use of this molecular ion was also useful for other nitride films, such as Si3N4. These results suggest that the radicals having high electron affinity can be applied widely to the analysis of small amounts of impurities. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    Secondary ion yields depending on the primary oxygen ion energy in cameca IMS-4f instrument (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 864-869 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The secondary ion yields of six element in silicon were measured as a function of the primary oxygen ion energy in a Cameca IMS-4f SIMS instrument. The ion yields of elements with a high ionization potential decrease steeply with primary ion energy owing to the decreasing surface oxygen concentration. The decrease of the ion yield depends on the ionization potential. This relation and the known relative sensitivity factors enable a semiquantitative analysis of impurities in silicon to be carried out without standard samples.A similar study combined with oxygen flooding shows that the yields are now very high and independent of the primary ion energy. Profile distortions due to segregation effects, however, can occur.A comparison of the ion yields obtained with and without energy offset under low and high oxygen surface coverage shows that the shape of the arsenic secondary ion energy distribution is drastically changed leading to pronounced differences in ion yields.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740211208
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    Paper (German National Licenses)
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