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  • Polymer and Materials Science  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Initial growth of AlN on clean and oxidized iron studied by AES and EELS (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 193-196 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have studied by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) the room temperature growth of aluminium nitride (AlN) at the surface of clean and oxidized polycrystalline iron. The films were deposited by reactive rf-sputtering in an N2-Ar atmosphere. Very low coverages were possible thanks to a precise partial pressure controller based on electron impact emission spectroscopy (EIES).The AlN/Fe interface study has revealed the formation of an iron nitride at the surface of the substrate and of a compound close to AlN as a first monolayer. AlN clusters grow directly on this nitride layer and we did not detect the formation of any alloy between iron and aluminium. A modelization of the AES signal intensities suggests a Stranski-Krastanov growth mode.For the oxidized iron, Auger lines showed an Fe2O3 surface layer on an Fe3O4 film oxide. The former oxide was reduced to Fe3O4 by the incoming aluminium which forms a two-phase film made of Al2O3 and AlN resulting in an (AlN)x(Al2O3)1-x stoichiometry. The concentration of this oxide phase decreases after the diffusion of the oxygen stops. Pure AlN begins to grow on this two-phase film.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220143
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of CeO2 on Si(111) studied by LEED, AES, XPS and RBS (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 186-189 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The deposition of CeO2 on Si(111) has been studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). LEED shows the CeO2 layer to grow in the (111) orientation. The formation of a silicon oxide layer at the interface is observed. The thickness of this oxide layer is found to vary between about 1 and 8 nm, depending on the thickness of the CeO2 layer. A model for the growth of CeO2 and for the formation of the silicon oxide layer at the interface is proposed.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220141
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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