ISSN:
0142-2421
Keywords:
XPS
;
x-ray photoelectron spectroscopy
;
Ge
;
adsorption
;
trimethylsilane
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Trimethylsilane (TMSiH) was adsorbed onto a Ge(100) surface at a temperature of -150±3°C and x-ray photoelectron spectroscopy (XPS) was used to study the resulting surface species as functions of the TMSiH exposure in Langmuir (L). The core-level C 1s, Si 2p and Ge 3d photoelectrons were monitored after each dosing. It was observed that the C-C bonds are the dominant species formed at the low doses of TMSiH. The second abundant species at the low coverage is the C-Ge bond. This indicated dissociative adsorption of TMSiH molecules onto a clean Ge(100) surface, which is similar to the adsorption of TMSiH molecules onto an Si(100) surface. As the dose increases, the Si-C species gradually increase due to physisorbed TMSiH on top of the C-C- and C-Ge-covered surface. This study clearly reveals the growth processes of TMSiH on a Ge(100) surface. The electronegativities of C, Si and Ge and the bond strengths of C-C, C-Si and C-Ge were invoked to discuss the initial formation of C-C and C-Ge on the Ge(100) surface. © 1998 John Wiley & Sons, Ltd.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
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