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  • 1
    Electronic Resource
    Electronic Resource
    Atomic mixing in ion probe microanalysis (1975)
    Springer
    Applied physics 6 (1975), S. 277-279 
    Details
    ISSN: 1432-0630
    Keywords: Surface analysis ; SIMS
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The atomic mixing due to a knock-on cascade has much influence on the depth resolution of ion probe microanalysis. The preliminary experimental results support the assumption that the depth resolution due to this effect is determined by the competition of sputtering rate and creation rate of atomic displacement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883764
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Depth Profiling by Combined SIMS-ESDMS Analysis: a New Surface Analytical Technique (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 155-160 
    Details
    ISSN: 0142-2421
    Keywords: a new surface analytical technique ; SIMS ; ESDMS ; SIMS-ESDMS technique ; depth profiling ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Electron-stimulated desorption mass spectrometry (ESDMS), a new technique based on the mass analysis of ions desorbed by a high-energy (several keV) electron beam, has analytical features that complement SIMS. The ESDMS has high sensitivity in the surface analysis of both adsorbates and the first one or two monolayers of substrate constituents. The variations in ESDMS signal intensities and in the sampling surface depth with time were negligible even in a one-monolayer sample. Using this combined SIMS-ESDMS technique, depth profiling analysis was performed for several different metal layers deposited on wafers and for a boron-implanted wafer. The sample depth was changed by sputtering with an ion beam, and the surface analysis at each depth was done by ESDMS with the ion beam off. The ion profiles by SIMS-ESDMS closely coincided with the SIMS profiles. The SIMS-ESDMS technique should be particularly useful for thin layered samples, because the signal-to-noise ratio can be improved by accumulating the ESDMS signals for as long as required without changing the sampling depth under continuous bombardment by the electron beam. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
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