ISSN:
1057-9257
Keywords:
Cathodoluminescence
;
Strain
;
ZnSe
;
Depth profiling
;
Defects
;
Impurities
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
In This paper we illustrate the use of an electron beam of variable energy to get depth information on the strain, impurity and defect distribution in ZnSe epilayers. From the increase in splitting of the free light and heavy hole exciton bands with increasing electron beam energy we deduce that the strain increases with depth. From the increase in the luminescence intensity of the impurity and defect bands compared with the luminescene intensity of the free heavy hole exciton band with increasing electron beam energy we deduce that the impurity and defect densities also increase as a function of depth.
Additional Material:
6 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030142
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