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Plasma-induced deposition of titanium nitride from TiCl4 in a direct current glow discharge: Control of the chlorine content and gas-phase nucleation (1996)

Patscheider, Jörg ; Shizhi, Li ; Vepřek, Stan

Springer

Plasma chemistry and plasma processing 16 (1996), S. 341-363

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Details

ISSN: 1572-8986

Schlagwort(e): Titanium nitride ; glow discharge plasma CVD ; TiCl4 wear protective coatings ; diffusion barriers

Quelle: Springer Online Journal Archives 1860-2000

Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein

Notizen: Abstract Titanium nitride thin films have been deposited from TiCl4, N2, and H2, in a low-pressure glow discharge at temperatures of ≤500°C, which are compatible with most applications. Based on our earlier work on the effect of tire plasma parameters on the chemical pseudoequilibrium in this and in similar systems, the chlorine content could he reduced to less than 2 at %. Suppression of the positive column reduced the gas-phase reaction within the reactor volume and the concomitant homogenous nucleation Dense, vent hard films with golden color could he deposited on various substrates including silicon and steel.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01447150

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