ISSN:
1573-4854
Schlagwort(e):
porous silicon
;
superlattices
;
oxidation
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
Notizen:
Abstract Initial stage of porous silicon (PS) formation has been studied in an original way. Multilayer structures constituting of very thin layers of low porosity and thick layers of high porosity have been fabricated and characterised by optical tools and electron microscopy. The non linear behaviour resulting in a change in the dissolution velocity has been quantified by using a stack layer structure. Finally using thermal oxidation it has been shown that, due to the selective oxidation as a function of the porosity, porous silicon can be used to produce a Si/SiO2 like structure.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1009618517652
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