ISSN:
1573-4854
Keywords:
porous silicon
;
stain etching
;
morphology
;
HREM
;
reflectance spectrometry
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Porous silicon films, nearly 100 nm thick, were produced by stain etching of n+-type silicon substrates. The films were studied by a non-destructive technique: dielectric function profiles were deduced by spectral reflectance via a finite difference model, and porosity was computed by the Effective Medium Approximation. The obtained information, combined with High Resolution Electron Microscopy observations,provided a deeper insight on the relations among technological process, morphology and reflective properties. Our preliminary results outline the possibility to control the porosity profile as well the reflectance of the porous films via the oxidising species concentration in the stain etching solution.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009607725830
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