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Digitale Medien

Decomposition of CCl4 in an RF discharge—A gas chromatography and time-resolved emission spectroscopy study (1981)

Tiller, H. -J. ; Berg, D. ; Mohr, R.

Springer

Plasma chemistry and plasma processing 1 (1981), S. 247-260

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ISSN: 1572-8986

Schlagwort(e): Plasma chemistry ; plasma etching ; spectroscopy

Quelle: Springer Online Journal Archives 1860-2000

Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein

Notizen: Abstract The decomposition of CCl4 in an rf discharge starts by a very fast electron attachment mechanism $$\begin{gathered} CCl_4 \xrightarrow{{ + e}}(CCl_4^ - ) \to CCl_3 + Cl^ - \hfill \\ \hfill \\ k_0 \hfill \\ \end{gathered}$$ A first-order rate constant, (k0 · ne) ≈ 10+2−10+3 s−1, is estimated by two-channel time-resolved emission spectroscopy. The ability of the method to detect the change of concentrations in plasma processes is discussed. A steady-state product distribution containing CCl4, C2Cl4, C2Cl6, Cl2, and glow polymer as main products is formed via recombination processes. The influence of plasma power density on this product distribution is given by gas-chromatographic results.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00568833

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