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Digitale Medien

Kβ X-ray emission spectra of Si and SiO2 (1975)

Karras, M. ; Juslén, R. ; Graeffe, G.

Springer

Applied physics 6 (1975), S. 185-187

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Details

ISSN: 1432-0630

Schlagwort(e): Kβ X-ray spectroscopy ; silicon and quartz ; valence electron states

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Kβ X-ray spectra of Si and SiO2 have been measured accurately with a double crystal spectrometer. The measuredKβ spectrum of silicon element was compared with calculations of the electronic density of states. Observed intensity distribution shows that thep-electrons predominate at the top of the valence band, and somep-like states extend to the middle of the valence band. According to MO calculations the most intensiveKβ line of SiO2 is 4t 2 (100), the 3t 2 (16) line is 17.9 eV lower, and 5t 2 (5) line 6.3 eV higher. In our measurements the energy differences are 13.0 and 4 eV, respectively, and intensities 30% and 3% from the main line.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00883750

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