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Low resistivity quasi-epitaxial Mo-Ta alloy and high-quality anodic oxide for a-Si thin-film transistor liquid-crystal display (1989)

Ikeda, M. ; Dohjo, M. ; Oana, Y.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2052-2055

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Sputtered Mo-Ta alloy and its anodic oxide have been studied in a Mo composition range from 0 to 30 at. %. Resistivity abruptly changed as Mo composition increased above 10 at. % from 185 μΩ cm to about 35 μΩ cm. The crystal structure transformed from tetragonal to cubic at this Mo composition. For higher Ta compositions, the crystal structure varied according to the under-layer polycrystalline film crystal structure, which may be denoted as quasi-epitaxial deposition, and the resistivity decreased to as low as 22 μΩ cm. Anodic oxide films of Mo-Ta alloy were superior to conventional Ta anodic oxide films in regard to resistivity and breakdown field, and the best insulator was obtained at Ta 95 at. %. This quasi-epitaxial Mo-Ta alloy and anodic oxide were applied for thin-film transistor matrix substrates.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.344312

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