ISSN:
1063-7826
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
Abstract A study of charge relaxation processes in metal-insulator-semiconductor structures containing the rare-earth oxides Gd2O3 and Lu2O3 as the insulator has been performed using the deep-level transient spectroscopy (DLTS) method in combination with a study of nonlinear oscillations in the metal-insulator-semiconductor structure connected to an external inductive circuit. On the basis of the DLTS results and the variation with temperature of the configuration of the period multiplicity regions of the controlling parameters (the amplitude and frequency of the applied voltage) it is shown that the generation of nonlinear oscillations in a metal-insulator-semiconductor structure is governed by the properties of the insulator-semiconductor interface, in particular, the density of surface states and the capture cross sections.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1134/1.1187590
Permalink
