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  • 1
    Digitale Medien
    Digitale Medien
    Ballistic transport through GaAs–AlGaAs superlattices in transverse magnetic fields (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3495-3500 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work, ballistic electron transport through the lowest miniband of a biased GaAs–AlGaAs superlattice is investigated in transverse magnetic fields. As method we employ a solid-state version of ballistic electron emission microscopy/spectroscopy using a metal-insulator-metal injector structure that replaces the tip of the scanning tunneling microscope (STM). The ballistic electron current measured as a function of the collector bias shows a peak at flatband conditions indicating coherent transport through the superlattice miniband. With increasing transverse magnetic fields, this peak is quenched and evidence of sequential LO-phonon scattering inside the superlattice is found. Using an extended transfer matrix method, the observed effects are quantitatively explained; differences to previous STM based measurements are discussed. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1288232
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  • 2
    Digitale Medien
    Digitale Medien
    Ballistic electron emission microscopy in liquid helium using low dimensional collector electrodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1725-1727 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report ballistic electron emission microscopy (BEEM) studies which show that a GaAs/AlGaAs heterostructure provides a very efficient collector electrode at 4.2 K. The enhanced thermal resolution at low temperature is utilized to determine the BEEM current threshold behavior very accurately. We find that diffusive scattering processes dominate the carrier transport across the Au/GaAs interface. Quantum wire regions on laterally structured samples are clearly identified with BEEM. The BEEM current is strongly enhanced on top of the quantum wires. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118010
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  • 3
    Digitale Medien
    Digitale Medien
    Local barrier heights on quantum wires determined by ballistic electron emission microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2876-2878 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, ballistic electron emission microscopy (BEEM) studies on quantum wire structures are reported. GaAs/AlGaAs heterostructures were laterally patterned with a period of 800 nm by laser holography and wet chemical etching. After evaporation of a 70 A(ring) Au film, wires are directly observed both in sample topography and BEEM current image. The BEEM current is found to be enhanced if the ballistic electrons are injected directly into the wire region. Measurements of local effective barrier heights yield increased values between the wires. In this case, the effective threshold for BEEM current detection is determined by the underlying AlGaAs layer. Thus, the quantum wires are also resolved in a barrier height profile. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116354
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  • 4
    Digitale Medien
    Digitale Medien
    Temperature dependence of far-infrared electroluminescence in parabolic quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3158-3160 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured the far-infrared emission from parabolically graded quantum wells driven by an in-plane electric field in the temperature range from 20 to 240 K. The peak emission corresponds to the intersubband plasmon in the parabolic potential. Its photon energy (6.6/9.8 meV) remains rather unaffected by temperature variations, the full-width at half-maximum ranges from 1 (T=20 K) to 2 meV (T=240 K). The reduction of emission efficiency with increasing temperature is attributed to the change in the nonradiative lifetime. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.124091
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  • 5
    Digitale Medien
    Digitale Medien
    A device layout for tunneling spectroscopy of barrier-separated electron systems with tunable dimensionality (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1758-1760 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A selective depletion scheme relying on self-aligned side gates is used to establish independent Ohmic contacts to two low-dimensional electron gases separated by a tunneling barrier. The self-aligned side gate technique is also demonstrated to be suitable for inducing an electrically tunable lateral confinement on the active region of the tunneling device via a central gate. As the central gate voltage is increased, the measured tunneling differential conductance clearly reveals a transition from tunneling between two-dimensional electron gases to tunneling between one-dimensional quantum wire states. The one-dimensional subband spacing of the collector electron channel could be continuously varied up to 6 meV. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123679
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  • 6
    Digitale Medien
    Digitale Medien
    Mid-infrared electroluminescence in GaAs/AlGaAs structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2892-2894 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Design, growth, and operation of an unipolar light emitting diode based on the material system GaAs/AlGaAs is reported. We present mid-infrared transmission, photocurrent, and electroluminescence measurements on a quantum cascade structure with intersubband transition energies greater than the optical phonon energy. Electroluminescence powers up to a few nanowatts at 6.9 μm have been measured. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119329
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  • 7
    Digitale Medien
    Digitale Medien
    Ballistic electron spectroscopy of vertical superlattice minibands (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 649-651 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a study of ballistic electron transport in GaAs/GaAlAs superlattices with different well widths. A three terminal device is used to inject an energy tunable electron beam via a tunneling barrier into a field free superlattice and to collect the transmitted current as a function of the injector energy. A significant increase of the collector current is observed due to miniband conduction in the superlattice. The transfer ratio α=IC/IE can be used to probe miniband positions and the miniband widths in field free superlattices. Longitudinal optical phonon replicas of the eigenstate structure are presented. The tunneling spectroscopy data agree well with self-consistent Poisson–Schrödinger calculations. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118296
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  • 8
    Digitale Medien
    Digitale Medien
    A highly transmittive semiconductor base for ballistic electron emission microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1218-1220 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ballistic electron emission spectroscopy and ballistic electron emission microscopy offer the unique possibility of probing subsurface quantum states. To improve the spectroscopic sensitivity, it is important to increase the amount of electrons, which are able to penetrate into the sample. In this work, we show that the transmission coefficient and the attenuation length of the base layer can be enhanced by more than one order of magnitude, if the commonly used thin metal film is replaced by a molecular beam epitaxy grown InAs layer. At low temperatures (T=100 K), a passivated InAs layer yields an attenuation length in the order of 70–90 nm instead of 5 nm obtained on Au films. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122132
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  • 9
    Digitale Medien
    Digitale Medien
    Ballistic electron emission microscopy on biased GaAs–AlGaAs superlattices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3138-3140 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work, ballistic electron transport through the lowest miniband of a biased GaAs–AlGaAs superlattice is investigated by ballistic electron emission microscopy (BEEM). In the BEEM spectra the miniband manifests itself as clear peak in the second derivative of the ballistic electron current. Biasing the superlattice results in a shift of the miniband position and the corresponding peak position. It is shown that the measured total transmission of the superlattice is in excellent agreement with the calculated transmission, which makes the superlattice a promising tunable energy filter for studying the energetic distribution of ballistic electrons. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122698
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  • 10
    Digitale Medien
    Digitale Medien
    Metal–insulator–metal injector for ballistic electron emission spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4007-4009 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We introduce a solid-state version of ballistic electron emission microscopy/spectroscopy (BEEM/BEES) on GaAs–AlGaAs heterostructures using a metal–insulator–metal (MIM) injector structure that replaces the tip of the scanning tunneling microscope (STM). In the present work, the MIM injector is realized by an Al–Al2O3–Al tunnel junction yielding an easy-to-fabricate three-terminal device for ballistic electron spectroscopy. The device principle is applied to several GaAs–AlGaAs structures. The barrier heights obtained from the onsets of the ballistic current spectra are in good agreement with self-consistent calculations as well as earlier experimental results achieved with STM-based BEES. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.125520
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