Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 309-311
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Fast degradation is reported of p+ boron-doped Si(1−x)Gex strained layers by 1-MeV electron irradiations performed at room temperature. n+p+ diodes with x=0, 0.12, and 0.16 are fabricated on conventional p-type Czochralski silicon substrates. Current/voltage, capacitance/voltage, and capacitance/temperature characteristics are studied before and after irradiation as a function of the electron fluence. A possible degradation mechanism is discussed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.108970
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