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Digitale Medien

Hydrogenated amorphous silicon studied by scanning tunneling microscopy (1988)

Wiesendanger, R. ; Rosenthaler, L. ; Hidber, H. R. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 4515-4517

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have used scanning tunneling microscopy under ultrahigh vacuum conditions in order to study the local electronic properties, as well as the topographical and chemical structure of hydrogenated amorphous silicon. Local characteristics were measured and images of the topography, as well as simultaneously recorded images of the local tunneling barrier height, were obtained with subnanometer resolution. The experimental results demonstrate that chemical inhomogeneities on a subnanometer scale, which may be caused by the presence of hydrogen in these samples, can be detected in the local tunneling barrier height images.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.340148

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Digitale Medien

Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy (1993)

Murrell, M. P. ; Welland, M. E. ; O'Shea, S. J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 786-788

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Using a modified atomic force microscope (AFM) with a conducting cantilever, we have investigated the dielectric strength of SiO2 gate oxide films. This has been achieved by spatially resolving the prebreakdown tunneling current flowing between the silicon substrate and tip. During AFM imaging a voltage ramp was applied to the tip at each image point so as to determine the local threshold voltage required to generate a small tunneling current in the oxide, without causing an irreversible electrical breakdown. For an oxide 12-nm thick this voltage was found to vary by more than a factor of 2.7 over an area of 0.14 μm2, with a maximum value of 40.5 V. This suggests that the breakdown strength of conventional metal-oxide-silicon capacitors may not be limited by the intrinsic dielectric strength of the oxide, but by imperfections or nonuniformities in the Si/SiO2 structure. By preventing irreversible oxide breakdown during scanning, we can image the dielectric properties of oxide films with a lateral resolution better than 20 nm.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.108579

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Direct writing of nanostructures from silane on silicon (111) (1995)

Wong, T. M. H. ; O'Shea, S. J. ; McKinnon, A. W. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 786-788

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Silicon based structures were fabricated using scanning tunneling microscope on a Si(111) surface by the localized decomposition of gaseous silane at pressures of 10−5–10−6 Torr. Continuous wires of width 5 nm could be produced while atomically resolved images of the nearby substrate were obtained. We argue that the fabrication process is effected by field-assisted decomposition of silane on the tip surface, which subsequently migrates to the tunneling region at the tip apex where it field desorbs to the silicon surface. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115467

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