Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 590 (Aug. 2008), p. 79-100
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diodes as well as Ge transistor structureswith high electroluminescence (EL) intensities in the region of interband transitions at roomtemperature were fabricated by different techniques and their luminescence properties were studied.By varying the Ge content in the solid solution, one can control the wavelength at the emissionmaximum in the range of 1.1 - 1.8 μm. The integrated EL intensity varies by a factor of less thantwo in the temperature ranges of 80 - 500 and 80 - 300 K for Si and SiGe LEDs, respectively. SiLEDs can effectively operate, at least, up to ~200°C. The data analysis shows that recombinationinvolving excitons is the dominant mechanism of near-band-edge radiative recombination in all thelight-emitting structures at room temperature. Some of the structures have record values of ELintensity and/or quantum efficiency, so they can be used as effective light emitters in Sioptoelectronics. In particular, Si LEDs were designed with a small p-n junction area of 8x10-3 mm2and a radiation power of 0.3 mW. The record total emission power of 46 mW was achieved in solarcell LEDs with an emitting surface area of 3 сm2. The internal quantum efficiencies of 0.5% and0.3% were recorded in Si0.948Ge0.052 and Si0.66Ge0.34 LEDs at the wavelengths of 1.15 and 1.3 μm,respectively. Room temperature near-band-edge EL was first observed in Ge structures
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.590.79.pdf
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