Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 537-542
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Strained InGaAsP/InP single quantum wells grown by low pressure metalorganic vapor phase epitaxy are studied by photoluminescence. We demonstrate that the analysis of the Arrhenius plot, specially modified to fit the temperature dependence of the integrated photoluminescence intensity, can be used as a complementary technique in order to identify different optical transitions that take place in more complex photoluminescence spectra. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.370701
Permalink
Bibliothek |
Standort |
Signatur |
Band/Heft/Jahr |
Verfügbarkeit |