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Arrhenius analysis optical transitions in strained InGaAsP quantum wells (1999)

Lúcio, A. D. ; Cury, L. A. ; Matinaga, F. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 537-542

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Strained InGaAsP/InP single quantum wells grown by low pressure metalorganic vapor phase epitaxy are studied by photoluminescence. We demonstrate that the analysis of the Arrhenius plot, specially modified to fit the temperature dependence of the integrated photoluminescence intensity, can be used as a complementary technique in order to identify different optical transitions that take place in more complex photoluminescence spectra. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.370701

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Digitale Medien

On three dimensional self-organization and optical properties of InAs quantum-dot multilayers (2000)

González, J. C. ; Matinaga, F. M. ; Rodrigues, W. N. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 3400-3402

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report on experiments aimed at producing three-dimensional self-organization in InAs quantum-dot multilayers embedded in GaAs. These InAs/GaAs quantum-dot multilayers have been grown by molecular beam epitaxy. Employing atomic force microscopy, we have analyzed the island density in samples with different number of periods of InAs/GaAs bilayers The results reveals a decrease and a tendency to saturation of the island density with an increase in the number of periods, as a three-dimensional self-organization characteristic of these samples. Optical properties of the samples are examined via photoluminescence spectroscopy. The evolution of the quantum-dot photoluminescence peak position indicates an increment in the mean size of the buried islands and a relative homogenization in size of the quantum dots, as the number of periods increases. The results of the optical measurements agree with the morphological data, and characterize a spatial process of self-organization, related to the increment of the number of periods in the multilayers. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.126659

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Interface form birefringence in native oxided microcavities (1997)

Valadares, E. C. ; Cury, L. A. ; Matinaga, F. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 82 (1997), S. 1500-1502

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A novel form birefringence effect associated with periodic corrugations in semiconductor/oxide interfaces of large-index-step high contrast Bragg mirrors of vertical microcavities is discussed in this communication. A simple model is proposed in which the corrugations have a square-wave profile with alternating refraction index whose period is much smaller than the cavity mode wavelength. This new effect has potential use in polarization controlled emission of vertical cavity surface emitting lasers. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.365934

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