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Innovation and Sectoral Employment: A Trade–off between Compensation Mechanisms (2002)

Ebersberger, Bernd ; Pyka, Andreas

Oxford, UK and Boston, USA : Blackwell Publishers Ltd

Labour 16 (2002), S. 0

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ISSN: 1467-9914

Quelle: Blackwell Publishing Journal Backfiles 1879-2005

Thema: Wirtschaftswissenschaften

Notizen: The question whether technological progress displaces employment or whether technological advance is beneficial for the level of employment has been at the core of economic debate for over two centuries. The beneficial effect might be achieved by several compensation mechanisms within the economic system. In this paper we categorize these compensation mechanisms into two basic categories that reflect the different nature of the ideas ruling the compensation. We discriminate the mechanisms of employment despite innovation from employment via innovation. In the context of new innovation economics we model an artificial industry implementing both compensation mechanisms. Simulation analysis is used to examine both the short–run and long–run properties of the model. There we focus on the influence of wage restraint policy on the functioning of the compensation mechanism.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1111/1467-9914.00211

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Digitale Medien

Oxide thickness mapping of ultrathin Al2O3 at nanometer scale with conducting atomic force microscopy (2001)

Olbrich, Alexander ; Ebersberger, Bernd ; Boit, Christian

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2934-2936

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this work, we introduce conducting atomic force microscopy (C-AFM) for the quantitative electrical characterization of ultrathin Al2O3 films on a nanometer scale length. By applying a voltage between the AFM tip and the conductive Co substrate direct tunneling currents in the sub pA range are measured simultaneously to the oxide surface topography. From the microscopic I–V characteristics the local oxide thickness can be obtained with an accuracy of 0.03 nm. A conversion scheme was developed, which allows the calculation of three-dimensional maps of the local electrical oxide thickness with sub-angstrom thickness resolution and nanometer lateral resolution from the tunneling current images. Local tunneling current variations of up to three decades are correlated with the topography and local variations of the electrical oxide thickness of only a few angstroms. © 2001 American Institute of Physics.