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  • 2000-2004  (2)
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  • 1
    Digitale Medien
    Digitale Medien
    Nanospot welding of carbon nanotubes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1169-1171 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single wall carbon nanotube (SWNT) bundles protruding from the SWNT layers on self-aligned Sn apexes were brought to a distance of 30 nm by a scanning tunneling microscope inside a transmission electron microscope. A straight bundle on the tip could be observed in situ in contact electrostatically with a looped bundle on the sample by applying tip bias voltages above 2.0 V. The bundles were welded at the nanometer size contact area by local Joule heating. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1395535
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  • 2
    Digitale Medien
    Digitale Medien
    Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 175-177 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate room-temperature deep ultraviolet (UV) current injection emission from Al0.03Ga0.97N/Al0.25Ga0.75N multiquantum-well (MQW) light-emitting diodes (LEDs) fabricated by metalorganic vapor phase epitaxy. The electroluminescence (EL) peaked at 333.0 nm under pulsed current injection. To our knowledge, this is the shortest wavelength ever reported for nitride QW LEDs. A Mg-doped GaN/AlGaN superlattice (SL) hole conductive layer was used as a p-type layer in order to enable current injection into such deep-level AlGaN QWs. We observed single-peak near band-edge emission from the QWs. The output intensity did not saturate up to current densities of 0.33 kA/cm2. We obtained a reasonable well width dependence on the EL peak wavelength of Al0.01Ga0.99N MQW LEDs, which confirms that the main emission peak originates from the QW regions. These results revealed that the Mg-doped SL hole conductive layers are highly suitable for application to GaN-based UV light-emitting devices. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126915
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