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  • 1995-1999  (94)
  • 1965-1969  (3)
  • 1
    Digitale Medien
    Digitale Medien
    Measurements on rotating ion cyclotron range of frequencies induced particle fluxes in axisymmetric mirror plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 2947-2954 
    Details
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comparison of phenomenological features of plasmas is made with a special emphasis on radio-frequency induced transport, which are maintained when a set of two closely spaced dual half-turn antennas in a central cell of the Phaedrus-B axisymmetric tandem mirror [J. J. Browning et al., Phys. Fluids B 1, 1692 (1989)] is phased to excite electromagnetic fields in the ion cyclotron range of frequencies (ICRF) with m=−1 (rotating with ions) and m=+1 (rotating with electrons) azimuthal modes. Positive and negative electric currents are measured to flow axially to the end walls in the cases of m=−1 and m=+1 excitations, respectively. These parallel nonambipolar ion and electron fluxes are observed to be accompanied by azimuthal ion flows in the same directions as the antenna-excitation modes m. The phenomena are argued in terms of radial particle fluxes due to a nonambipolar transport mechanism [Hojo and Hatori, J. Phys. Soc. Jpn. 60, 2510 (1991); Hatakeyama et al., J. Phys. Soc. Jpn. 60, 2815 (1991), and Phys. Rev. E 52, 6664 (1995)], which are induced when azimuthally traveling ICRF waves are absorbed in the magnetized plasma column. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.872427
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  • 2
    Digitale Medien
    Digitale Medien
    An elliptical wiggler for SPring-8 : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1937-1939 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: This paper presents a study for the realization of an elliptical multipole wiggler to be installed on the pilot beamline dedicated to material science at SPring-8. Such a wiggler should meet the requirements of third generation synchrotron sources (e.g., large horizontal aperture), as it uses a planar structure (two jaws above and below the vacuum chamber). Compared to the APPLE concept proposed by Sasaki, this new wiggler exhibits similar performances: 65% (85%/90%) circular polarization rate can be obtained up to 300 keV (200/150 keV) with high brilliance ((approximately-greater-than)1015photons/s/0.1%/mr2/mm2). Moreover this new design is easier to characterize than APPLE, since the sources of vertical and horizontal magnetic fields are independent. The effects of the magnet interactions (e.g., demagnetization in magnets and the consecutive loss of field) are not considered in the following but should be addressed in a future paper. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145763
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  • 3
    Digitale Medien
    Digitale Medien
    Development of an in-vacuum minipole undulator array for National Synchrotron Light Source In-Vacuum UNdulator (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 18-24 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: An in-vacuum minipole (short period) insertion device has been developed in a collaboration between SPring-8 and the National Synchrotron Light Source (NSLS). The magnetic arrays were assembled, field measured, corrected, and vacuum tested by SPring-8 and were installed in an NSLS-developed chamber with mechanical parts in the NSLS X-Ray Ring (E=2.584 GeV) in May 1997 and a successful commissioning of the device was carried out in June 1997. The device is made of permanent magnets with 30.5 periods and a period length of 11 mm. It is designed to produce fundamental radiation at 4.6 keV, and with a modest value of deflection parameter (K=0.7 at 3.3& mm gap) enables higher harmonics to be used as well, for a variety of experiments. A detailed description of the mechanical support and vacuum chamber will be reported elsewhere. We describe technical challenges encountered in constructing this type of device, and present an outline of our collaboration. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1148871
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  • 4
    Digitale Medien
    Digitale Medien
    Phaedrus-T probe techniques : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 434-436 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Probe techniques employed in ohmic, rf, and H-mode Phaedrus-T tokamak plasmas are discussed. The floating potentials of nonemitting probes are found to be insensitive to plasma potential fluctuations at the rf frequency. Both Langmuir and emissive probes have been swept. The Langmuir probes were swept into electron saturation where a low-frequency oscillation was sometimes observed. Large probes (biased electrodes) have been used to perturb the plasma into an H mode. The biased electrode I-V characteristics differ from those of nonperturbing Langmuir probes and can be used to help identify the H mode. Probe behavior during the H mode is discussed. Two novel reciprocating probe designs have been developed. The faster of the two achieves average speeds of 5 m/s, which to our knowledge makes it the world's fastest. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146371
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  • 5
    Digitale Medien
    Digitale Medien
    Nitridation process of sapphire substrate surface and its effect on the growth of GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3487-3491 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The nitridated layer formed on a (0001) sapphire (α-Al2O3) substrate surface by heating at 1050 °C in ammonia (NH3) gas was analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscope (TEM) and energy dispersive x-ray spectrometry (EDX). Their influence on the growth of GaN in the combined usage of initial nitridation and successive deposition of a buffer layer was examined by AFM observations. The intensity of the N1s nitrogen peak in the XPS rapidly increased with nitridation time, reaching saturation in a few minutes, and then continued to increase gradually. This change was found to correspond to morphological change revealed by AFM observations, that is, from a flat nitridated layer to high-density (109–1010 cm−2) nitridated protrusions. TEM observations and EDX measurements showed that the nitridation forms an amorphous layer consisting of AlNxO1−x. The flat nitridated layer, when combined with a buffer layer, favors two-dimensional growth of a thick GaN layer on it, while the layer with protrusions results in three-dimensional growth. Thus, thick GaN layers with smooth surfaces can be grown by controlling the surface of the nitridated layer, where a crystal-amorphous-crystal growth mechanism is successfully operating. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361398
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  • 6
    Digitale Medien
    Digitale Medien
    Erratum: "Nitridation process of sapphirre substrate surface and its effect on the growth of GaN'' [J. Appl. Phys. 79, 3487 (1996)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1942-1943 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363832
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  • 7
    Digitale Medien
    Digitale Medien
    The energy band alignment of Xc, Γc, and Γv points in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1763-1770 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Better carrier confinement in 0.6-μm-band laser diodes can be achieved by incorporating an AlInP layer into the (Al0.7Ga0.3)0.5In0.5P cladding layers. The effectiveness of this heterostructure, though, cannot be analyzed without detailed knowledge of the energy band alignment at the Xc, Γc, and Γv band extrema. We conducted photoluminescence and photoreflectance measurements at 12–100 K on (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (x=0.47–0.61) free from long-range ordering, and analyzed the results to obtain basic data on the alignment scheme. In these measurements we observed the Γc to Γv and the Xc to Γv transitions in bulk Al0.53In0.47P and (Al0.7Ga0.3)0.5In0.5P alloys, the AlxIn1−xP Xc to (Al0.7Ga0.3)0.5In0.5P Γv transition in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP superlattices, and the Xc to Γv and to the Γc to Γv transitions in 20-nm-wide AlxIn1−xP layers in (AlyGa1−y)0.5In0.5P/AlxIn1−xP/(AlyGa1−y)0.5In0.5P double heterostructures (x=0.33–0.39, y=0.7–1.0). We found that the energy level of Xc in AlxIn1−xP decreased by 0.09 eV as x increased from 0.47 to 0.61, the Xc of AlxIn1−xP crossed the Γc at 0.340 (±0.008), and the Γv of AlxIn1−xP crossed the Γv of (Al0.7Ga0.3)0.5In0.5P at x=0.47(±0.01). The share of the band offset at Γc for x=0.53 was 75(±3)%. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364064
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  • 8
    Digitale Medien
    Digitale Medien
    Observation of enhanced lateral confinement of excitons in GaAs quantum wires with various sizes (7–30 nm) by magnetophotoluminescence measurements (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2502-2504 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated magnetophotoluminescence spectra up to 40 T of GaAs quantum wires with various lateral widths (7–30 nm) grown by the selective metalorganic chemical vapor deposition. The photoluminescence peak shift due to the magnetic fields is more suppressed with decreasing the wire width. The observed energy shift was in good agreement with the calculation based on a variation method. These results clearly demonstrate existence of the two-dimensional confinement effect and enhanced binding energy of excitons. In the narrowest wire (7 nm), however, comparison of the experimental results with the calculation indicates penetration of exciton wavefunction from the two-dimensional potential to the barrier region. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113147
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  • 9
    Digitale Medien
    Digitale Medien
    p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1112-1113 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: p-type conduction in InN-containing nitrides doped with Mg has been achieved by metalorganic vapor-phase epitaxy. The hole concentration at room temperature is as high as 7×1017 cm−3. The activation energy of a Mg acceptor is estimated to be 204 meV. D–A pair emission with peak wavelength of about 405 nm is enhanced by thermal annealing. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113829
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  • 10
    Digitale Medien
    Digitale Medien
    Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double-heterostructure laser diodes on GaAsP substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 783-785 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Short-wavelength stimulated emission from a GaInP/AlGaInP double-heterostructure (DH) grown on GaAs0.6P0.4 substrates, where lattice-matched Ga0.7In0.3P is the active layer with Γ band-gap energy beyond 2.1 eV is investigated. Laser oscillation is attained at a wavelength below 590 nm. This shows that the DH attains sufficient carrier confinement for lasing even though the minimum Γ band-gap energy is close to that in the X band. By applying high-reflectivity coating on both facets of the cavity to decrease the optical mirror loss, we achieve lasing operation by the DH devices under pulsed current injection up to 200 K. The device exhibits threshold currents of 115 mA at 77 K and 380 mA at 200 K, and an output power level up to 0.3 mW. The oscillation wavelength is 577 nm at 77 K and 588 nm at 200 K when the current is injected at 1.2 times the threshold. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114187
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