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  • Artikel: DFG Deutsche Nationallizenzen  (2)
  • 1980-1984  (2)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (2)
Materialart
Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure (1980)
    Springer
    Journal of materials science 15 (1980), S. 332-336 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10−17 to 104 atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on log P O 2 versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, log P O 2=−9.0×104/T+63, where P O 2 (atm) and T (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and high P O 2 region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00551683
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure (1980)
    Springer
    Journal of materials science 15 (1980), S. 332-336 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10−17 to 104 atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on logP O 2 versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, logP O 2=−9.0×104/T+63, whereP O 2 (atm) andT (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and highP O 2 region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF02396780
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
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