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  • 1
    Digitale Medien
    Digitale Medien
    On the density of localized levels in amorphous silicon (1979)
    Springer
    Applied physics 18 (1979), S. 427-429 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.20 ; 71.55 ; 72.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899699
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Defect-level analysis of semiconductors by a new differential evaluation ofn(1/T)-characteristics (1979)
    Springer
    Applied physics 19 (1979), S. 307-312 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.20 ; 71.55 ; 72.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A new method for the defect-level analysis of extrinsic semiconductors is described. Provided that the defect-level concentration is not too large and the temperature is not too low, the Fermi levelE F is shifted with increasing temperature from a position near the conduction (or valence) band towards the middle of the forbidden gap monotonously. Thus majority carriers are emitted into the conduction (or valence) band from the defect levels successively. If for a small increment of the temperature the Fermi levelE F is shifted by ΔE F and the concentration of free majority carriers is increased by Δn, then the ratio Δn/ΔE F is a measure of the defect-level concentration within ΔE F . Furthermore we discuss how this analysis is influenced by additional defect levels outside the range over which the Fermi energy can be shifted by variation of the temperature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00900474
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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