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  • Chemistry  (2)
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 431-435 
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Nitrides of Ti, Al and TiAlx alloys were prepared by low energy ion implantation (3 keV N2+). The layer thickness was ∼ 10 nm. The nitride layers were characterized using XPS, UPS and a Kelvin probe. The insulating properties known for bulk AlN were found also for the prepared AlNimpl layers. The work functions for the alloys and the nitrides and their variation with the ion dose were determined. Peak parameters for the XP spectra deconvolution were established. Despite their thinness, the layers showed anodic stability in 0.5 M H2SO4 up to 1.3 V (SHE) for (TiAl)Nimpl and even up to 1.8 V (SHE) for AlNimpl. Above these potentials, the nitrides were oxidized to metal oxides.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 423-429 
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Owing to their combination of metallic and covalent properties, TiN and TiC are used as coating materials. In this work thin layers (layer thickness about 10 nm) of TiN and TiC were prepared by low-energy ion implantation (3 keV N2+, 4 keV C2H4+) into Ti. The change in surface composition as a function of ion dose was followed by XPS. The electrochemical behaviour was studied in an electrochemical cell attached to the surface equipment; therefore no surface oxidation due to air contact took place. TiN and TiC revealed a stability up to 1.5 and 1.0 V respectively. Above these potentials oxidation to TiO2 and N2 in the case of TiN and to TiO2, CO2 and CO in the case of TiC occurred. The gaseous oxidation products were dissolved in the oxide layer and influenced its properties.
    Zusätzliches Material: 10 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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