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  • 11
    Digitale Medien
    Digitale Medien
    A PC-based instrument of a modified differential normal pulse voltammetry with background current correction technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1679-1685 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Instead of the fixed pulse durations in conventional differential normal pulse voltammetry, a PC-based instrument using adaptable pulse duration vectors for background current correction has been proposed and implemented. With this PC-based instrument, a sequence of pulse duration vectors is determined in an initial blank solution voltammetry by assigning a decay percentage constant to the charging current. These vectors are then used in the subsequent test solution in order to obtain a pure oxidation current response in a resulting voltammogram with its corresponding features. Experimental results are presented to show the effectiveness and advantages of the PC-based instrument for the measurements of dopamine in a phosphate buffered solution.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1144859
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  • 12
    Digitale Medien
    Digitale Medien
    Picosecond electrical characterization of x-ray microchannel-plate detectors used in diagnosing inertial confinement fusion experiments (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3285-3288 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The picosecond electrical pulse-propagation characteristics of microchannel-plate detectors, used in diagnosing laser-driven inertial-confinement-fusion experiments, were measured with an electro-optic sampling system. We determined propagation velocity and signal distortion of the microchannel-plate microstrip, as well as its characteristic impedance and the substrate relative dielectric permittivity. These parameters are critical for proper calibration of the detectors and serve as a guide for their improved designs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1144291
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  • 13
    Digitale Medien
    Digitale Medien
    Simultaneous extraction of minority-carrier transport parameters in crystalline semiconductors by lateral photocurrent (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 321-333 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The mathematical analysis and parameter-extraction process for a new characterization method are presented. This method allows simultaneous measurement of the minority-carrier lifetime, diffusion coefficient, and diffusion lengths as well as surface recombination velocity. The technique employs semi-infinite two-dimensional photodiodes and uniform, instead of focused, illumination. The paper deals with the derivation of exact closed-form solutions associated with two-dimensional devices and discusses the simultaneous extraction of minority-carrier transport parameters.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345256
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  • 14
    Digitale Medien
    Digitale Medien
    Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1235-1239 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a study of spectral- and time-resolved reflectivity and transmission measurements on hydrogenated amorphous silicon (a-Si:H) with 50 fs time resolution. Electron-hole pairs are photoexcited into the extended states of a-Si:H by an ultrashort pump pulse at (h-dash-bar)ω=2 eV. The temporal evolution of the photoinduced optical response is studied for a broad range of excitation densities from 1018 up to 1020 cm−3, and on a timescale of up to 200 ps. The temporal evolution of the optical response is discussed in terms of recombination and trapping mechanisms for carriers in the extended states of a-Si:H.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353263
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  • 15
    Digitale Medien
    Digitale Medien
    A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse-width deep level transient spectroscopy method: An application to PT/CdS photodetector (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 760-766 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel method is presented here to experimentally decompose nonexponential capacitive transients into the appropriate components from the closely spaced deep trap states. Using temperature dependent pulse-width deep level transient spectroscopy (TDP-DLTS) technique, we show for the first time that two bulk trap states and one continuously distributed interface states in (Pt/CdS) photodiodes can be successfully separated. The basic principle is to set the applied pulse width to follow an averaged temperature-dependent capture time constant and divide the DLTS spectrum. In the example of Pt/CdS photodiodes, we show that all physical parameters including thermal activation energies, capture cross sections, and trap densities are more accurately calculated after each component is separated from others. The origins for those bulk traps and interface states are also discussed. Without any complicated mathematics or program, TDP-DLTS can be applied to both large and small voltage pulse DLTS measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353334
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  • 16
    Digitale Medien
    Digitale Medien
    X-ray diffraction analysis of Si1−xGex/Si superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3474-3479 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si1−xGex/Si strained-layer superlattices grown by molecular-beam epitaxy on Si substrates were investigated by x-ray double-crystal diffraction and x-ray grazing incidence diffraction. Both coherent and incoherent interfaces between the two components of the superlattices were observed. By fitting computer-simulated double-crystal x-ray-diffraction rocking curves to the experimental data, it is determined that there exist graded variations in both the component thickness ratio t1/t2 (t1 and t2 are the thickness of the Si1−xGex and the Si layers, respectively) and the fraction x in one sample. The x-ray grazing incidence diffraction experiments reveal a lattice strain relaxation of about 27% in another sample. The lattice relaxation and the influence of variations of x and t1/t2 on the rocking curves are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351423
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  • 17
    Digitale Medien
    Digitale Medien
    Coherent continuous wave operation of 10×10×2 grating-surface-emitting diode laser array in a ring configuration (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7645-7647 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Coherent cw operation of a 10×10×2 grating-surface-emitting diode laser array in a ring configuration is demonstrated. At near twice the threshold current, the ring array exhibits a high degree of spatial coherence (an average of 86%) between emitting grating sections and a narrow linewidth of 28 MHz. The far field fringe visibility is 80% and 88% in the lateral and longitudinal directions, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350363
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  • 18
    Digitale Medien
    Digitale Medien
    Magneto-optical properties and temperature dependence of SmCoDy films with perpendicular magnetic anisotropy (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5997-5997 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Amorphous LRE-TM SmCo perpendicular magnetic film provides a promising candidate for perpendicular magnetic recording media.1 In order to improve the magneto-optical properties of SmCo films, we have studied the ternary system: Smy(Co100−xDyx)100−y films which were prepared by rf magnetron sputtering system. Because the Dy moment is antiferromagnetically coupled to the Co moment and Dy has a larger magnetic anisotropy, Dy addition will increase Ku and decrease Ms of LRE-TM films. With the Dy addition content increased from 0 to 10 at. %, the perpendicular anisotropy constant K⊥ (K⊥ = Ku(K⊥=Ku− 2πM2s) increased to improve the magneto-optical properties of SmCo films. The torque curve measurement and Kerr hysteresis loop of SmCoDy film had proved it was perpendicular magnetic film. In order to prevent RE metal selective oxidation of SmCoDy films, a protective layer AlN was used. AlN films were prepared by rf reactive sputtering.2 The temperature dependence of AlN/SmCoDy/glass were studied. Hc decreased rapidly when temperature increased while its Kerr angle decreased slightly. When the sample was cooled to room temperature, Hc and θk returned to its original value. The results show SmCoDy films may become new material of magneto-optical recording media. The long-term stability and microstructure of SmCoDy films have also been studied.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347790
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  • 19
    Digitale Medien
    Digitale Medien
    13.4% efficient thin-film CdS/CdTe solar cells (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7608-7612 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349717
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  • 20
    Digitale Medien
    Digitale Medien
    Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1916-1918 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346583
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