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1

Digitale Medien

Metallurgical study of Ni/GaSb (111) and (001) contacts: Comparison with the Ni/GaAs and Ni/AlAs systems (1994)

Guivarc'h, A. ; Caulet, J. ; Minier, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 5061-5066

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Solid-state interdiffusions at the Ni/GaSb(111) and (001) interfaces were investigated in the temperature range 200–600 °C using 1.8 MeV He+ ion backscattering and channeling and also using x-ray diffraction. The starting point was the experimental determination of the Ni-Ga-Sb phase diagram. The steps of the interaction were the same for GaSb(111) and GaSb(001). Three various phases were observed: the ternary A phase with the Ni2.5GaSb atomic composition, Ni2Ga3, and Ni2Ga0.25Sb1.75, the Ga-rich limit of the substituted NiSb binary compound. All these phases had a hexagonal pseudocubic structure. First, an epitaxial Ni2.5GaSb A phase reacted layer was obtained. This phase was not in thermodynamical equilibrium with GaSb and the final product was a mixture of Ni2Ga3 and Ni2Ga0.25Sb1.75 grains with an average atomic composition equal to Ni1.6GaSb. The metallurgical behavior of the Ni/GaSb contacts was compared to that of the Ni/GaAs and Ni/AlAs contacts. It was concluded that the experimental ternary diagram allowed a correct estimation of the sequence of phase formation in metal/compound semiconductor contact. In contrast, due to major differences in the ternary phase diagrams, the steps of the solid phase interdiffusion cannot be deduced from the results obtained on a priori equivalent contacts.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.355748

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2

Digitale Medien

Metallurgical study of Ni/GaAs contacts. I. Experimental determination of the solid portion of the Ni-Ga-As ternary-phase diagram (1989)

Guérin, R. ; Guivarc'h, A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2122-2128

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: X-ray diffraction on powders and single crystals has been performed to determine the limits of homogeneity and crystallographic data of metallic ternary phases which occur in the bulk Ni-Ga-As system and to draw the solid portion of the phase diagram. The samples were prepared in closed, small-volume containers to prevent the formation of gas-phase products. Five ternary phases which crystallize in hexagonal symmetry and are all structurally derived from the NiAs type were evidenced. Among them, three phases show hexagonal superlattices: a(3)1/2×3c, 2a×4c, and 3a×2c which denote ordered structures. Neither nickel nor ternary phases are in thermodynamic equilibrium with GaAs, in contrast to the binaries NiGa, Ni2 Ga3, and NiAs which are. The bulk-phase diagram determined in this study provides a framework within which most of the experimental data concerning the products of reactions at Ni/GaAs interfaces can be understood.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.344307

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3

Digitale Medien

Metallurgical study of Ni/GaAs contacts. II. Interfacial reactions of Ni thin films on (111) and (001) GaAs (1989)

Guivarc'h, A. ; Guérin, R. ; Caulet, J. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2129-2136

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The solid-state interactions at the Ni/(111) and (001) GaAs interfaces were investigated in the temperature range 25–600 °C by Rutherford backscattering spectrometry and channeling experiments, x-ray diffractometry, and four-point probe. The samples were prepared by depositing nickel films, 70 nm thick, onto clean (111) and (001) GaAs single-crystal substrates under 5×10−10 Torr vacuum. Then they were annealed for 1 h at increasing temperatures under a flow of forming gas (90% N2-10% H2). The sequence of phase formation was the following: first, a ternary phase at 200 °C, then a mixture of two ternary phases at 250 and 350 °C, and finally from 400 to 580 °C a mixture of a ternary phase and NiAs. This last structure was stable up to 600 °C on (111) GaAs, but at this temperature a further consumption of GaAs led to a mixture of (NiGa+NiAs) onto (001) GaAs. Small differences were observed versus the orientation of the GaAs samples but all the ternary and binary phases exhibited epitaxial arrangements with both the (111) and (001) GaAs substrates. The ternary-phase diagram for the bulk Ni-Ga-As system provides the basis for understanding the sequence of the above results and much of the information in the literature about Ni/GaAs interfacial reactions.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.344308

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4

Digitale Medien

Metallurgical study of Ni/(Ga,Al) As contacts. III. Transmission electron microscopy characterization of ternary superstructured phases in the reacted layers (1991)

Poudoulec, A. ; Guenais, B. ; Guivarc'h, A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 7613-7619

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Solid-state interactions of Ni thin films on (111) GaAs and (111) AlAs were investigated using transmission electron microscopy. We show that the experimental determination of the Ni-Ga-As and Ni-Al-As ternary phase diagrams, and the accurate determination of the atomic composition and crystalline structure of the various ternary solid solutions are absolutely required to understand the x-ray and electron diffraction patterns, and thus identify the compounds in the reacted layers and explain the different steps of the reactions. For this purpose, we report the results obtained on three typical samples, where hexagonal superstructured ternary phases have been observed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349718

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5

Digitale Medien

Solutal convection during directional solidification of a binary alloy: Influence of side walls (1988)

Guérin, R. Z. ; Billia, B. ; Haldenwang, P. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Physics of Fluids 31 (1988), S. 2086-2092

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ISSN: 1089-7666

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this study the effect of rigid side walls on the onset of solutal convection in the melt is investigated for upward solidification of a binary alloy. The physics is described by the Navier–Stokes equations in the Boussinesq approximation and by the balance of solute, which is coupled with the appropriate boundary conditions. By using a Tau–Chebyshev spectral method the numerical resolution of the perturbed system has been carried out for two alloys: lead–tin, which is the reference in the literature, and lead–thallium, which is currently under study. For both cases the lateral confinement has a stabilizing effect for all the aspect ratios that have been considered.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.866661

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6

Digitale Medien

Onset of solutal convection during directional solidification of a binary alloy in a cylinder (1991)

Guérin, R. Z. ; Billia, B. ; Haldenwang, P.

New York, NY : American Institute of Physics (AIP)

Physics of Fluids 3 (1991), S. 1873-1879

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ISSN: 1089-7666

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The onset of solutal convection during directional solidification of a binary alloy growing in a cylinder is determined for the axisymmetric and selected nonaxisymmetric flow states. The Tau–Chebyshev projection method is used to solve the system of linearized partial differential equations. The Pb–Tl and Pb–Sn alloy systems are investigated, which, respectively, correspond to k=1.1 and to k=0.3. A critical convective pattern with an azimuthal wave number α=1 is obtained when the aspect ratio β of the cylinder is less than about 6.5. At this value a transition to axisymmetric modes (α=0) is evidenced. Finally, the comparison with previous results for growth in a vertical slot shows the enhancement of the hydrodynamic stability associated to the 3-D confinement by the cylinder.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.858211

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7

Digitale Medien

Pattern study in the 2-D solutal convection above a Bridgman-type solidification front (1997)

Le Marec, C. ; Guérin, R.

[S.l.] : American Institute of Physics (AIP)

Physics of Fluids 9 (1997), S. 3149-3161

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ISSN: 1089-7666

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We numerically investigate the two-dimensional (2-D) convective flow developing in the liquid phase above an alloy growing in the upward Bridgman configuration of directional solidification. Using a time-dependent approach, we are able to describe the various cycles of hysteresis that connect the different branches of stable steady solutions. The main trends of the present results show that the bifurcation diagram, composed of the branches, found in previous works for the partition coefficient k=0.3, remains qualitatively valid for k=1.1: for a small frontal width the leading primary bifurcation is subcritical, while a transcritical bifurcation occurs for larger front. We bring the new complementary feature that the subcritical bifurcation becomes supercritical when the front width tends to zero. Furthermore, for an intermediate frontal width, we address the question of the nature of upper stability limits on various stable steady branches. We show that the limit occurs via either a steady secondary bifurcation or a Hopf bifurcation that initiates an unsteady solution branch which is followed up to chaos. The related route is a subharmonic cascade. When following this chaotic branch, a striking relaminarization process towards a steady secondary branch occurs. Finally we shortly investigate the case of a twice larger frontal width, for which several cycles of hysteresis are equally reported. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.869432

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8

Digitale Medien

Determination of Water Vapor by Infrared Analysis (1953)

Luft, K ; Guerin, R

s.l. : American Chemical Society

Analytical chemistry 25 (1953), S. 1574-1574

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ISSN: 1520-6882

Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/ac60082a607

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9

Digitale Medien

Synthesis, lattice parameters and thermal expansion coefficients of rhodium arsenide Rh"2As and some substituted compounds

Secoue, M. ; Auvray, P. ; Toudic, Y. ; [weitere]

Amsterdam : Elsevier

Journal of Crystal Growth 76 (1986), S. 135-141

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ISSN: 0022-0248

Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik

Materialart: Digitale Medien

URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(86)90019-9

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10

Digitale Medien

Growth of Ni"3Ga"2, NiGa and Ni"2Ga"3 on GaAs (001) and (111) in a molecular beam epitaxy system

Guivarc'h, A. ; Caulet, J. ; Guenais, B. ; [weitere]

Amsterdam : Elsevier

Journal of Crystal Growth 95 (1989), S. 427-430

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ISSN: 0022-0248

Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik

Materialart: Digitale Medien

URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(89)90435-1

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