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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 313-317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared attenuated total reflection spectra from thin SiO2 films sandwiched between a Ge prism and a Si substrate were investigated. The measurements were performed in the range of Si-O-Si stretching vibrations and compared with calculated spectra using bulk values for the SiO2 dielectric function. This comparison enabled confirmation of the experimentally observed peak broadening and peak shift of the longitudinal-optical-phonon mode at ∼1250 cm−1 for films thicker than 30 A(ring) by using the exact expression for calculating p-polarized spectra. It is also shown that the linear approximation for vibrational spectroscopy in this frequency range is only valid for thicknesses less than 15 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359394
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  • 2
    Electronic Resource
    Electronic Resource
    Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9166-9171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport and recombination properties of hydrogenated amorphous silicon/hydrogenated amorphous germanium (a-Si:H/a-Ge:H) multilayers have been investigated as a function of the a-Ge:H well width by electrically detected magnetic resonance (EDMR). For a-Ge:H layers thicker than 4 nm, the EDMR signal is positive in sign, or enhancing, and composed of two components. It is observed in the dark as well as under illumination, and assigned to hopping through defects perpendicular to the multilayer planes. For the samples with a-Ge:H layer thinner than 4 nm, the EDMR signal is negative in sign, or quenched, and observed only under illumination. The quenched signal is also composed of two components, and is assigned to the recombination of the photocreated carriers in the a-Si:H layer, as well as in the interface. The results indicate that the good photoconductivity in the infrared observed in such multilayers is explained by transfer of carriers from the a-Ge:H well to the a-Si:H layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362588
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  • 3
    Electronic Resource
    Electronic Resource
    Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3144-3146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114861
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102493
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  • 5
    Electronic Resource
    Electronic Resource
    Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3580-3582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model to predict the gate tunnel current in metal–oxide–semiconductor structures has been developed by employing the nonparabolic E-k dispersion for describing the tunneling electron momentum. The tunnel electron effective mass mox and the Fermi energy in the gate have been used to fit the calculated tunnel current to the measured one. It is shown that in the direct tunneling regime the tunnel electron effective mass mox apparently increases with decreasing oxide thickness presumably due to the reduction of Si–O–Si bond angle in the compressively strained layer near the SiO2/Si interface, while in the Fowler–Nordheim tunneling regime mox remains constant at 0.50 m0. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330220
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  • 6
    Electronic Resource
    Electronic Resource
    Quantum confinement effect in self-assembled, nanometer silicon dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3881-3883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122923
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  • 7
    Electronic Resource
    Electronic Resource
    Surface Fermi level position of hydrogen passivated Si(111) surfaces (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1247-1249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core and valence band photoemission data of hydrogen passivated Si(111):H surfaces yield surface Fermi level positions that are indicative of a near-surface depletion layer for n- as well as p-type samples. The bulk Fermi level positions are attained after annealing at ∼400 °C. These observations are explained in terms of a hydrogen induced passivation of donors and acceptors in a surface layer of the order of a μm as a result of the wet-chemical etching procedure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115941
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  • 8
    Electronic Resource
    Electronic Resource
    Resonant tunneling through a self-assembled Si quantum dot (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2291-2293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/1 nm-SiO2/a single Si quantum dot/1 nm-SiO2/n+-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118816
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  • 9
    Electronic Resource
    Electronic Resource
    Nanometer-scale modification of the tribological properties of Si(100) by scanning force microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2499-2501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-terminated Si(100) surfaces were patterned on the nanometer scale using a conducting-probe scanning force microscope (SFM) operating in air ambient. To generate the nanostructures, negative voltages were applied to the conductive SFM tip with respect to the sample while scanning in contact mode. After structuring, the same SFM tip was used to measure simultaneously the sample topography and the friction force between tip and sample. An increase in height by about three nanometers resulting from field-enhanced oxidation is observed in areas where the tip had been negatively biased with constant voltages above 7 V. The topographical change is accompanied by a relative increase of the friction force of about 20% over the structured areas. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113146
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  • 10
    Electronic Resource
    Electronic Resource
    High-fluidity chemical vapor deposition of silicon dioxide (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide has been deposited by the glow discharge decomposition of SiH4 and O2 at substrate temperatures below −80 °C, where the thermal reaction on the surface was basically suppressed. Ion flux onto the growth surface was significantly reduced by employing a triode reactor. Oxide deposition onto surfaces with narrow features proceeds from the bottom of a trench or groove and results in planarization of the topography. Such high-fluidity chemical vapor deposition is inferred to occur through the formation of liquified precursors on the cooled surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106898
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