Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (122)
  • 11
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline V thin films on (001)Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4425-4430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of an amorphous interlayer (a-interlayer) formed by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline V thin films on (001)Si have been investigated by conventional and high-resolution transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 430–465 °C. The growth then slows down and deviates from a linear growth law as a critical thickness of the a-interlayer is reached. The activation energy of the linear growth and maximum thickness of the a-interlayer were measured to be 1.1±0.3 eV and 4.5 nm, respectively. The correlations among differences in atomic size and electronegativity between metal and Si atoms and activation energy of the linear growth, critical and maximum a-interlayer thickness, the calculated free-energy difference in forming the amorphous phase, as well as atomic mobility in Ti/Si, Zr/Si, Hf/Si, Ta/Si, Nb/Si, and V/Si systems are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359470
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Investigation of the oxidation kinetics of CoSi2 on (111)Si by transmission electron microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 865-870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to study oxidation kinetics of CoSi2 on silicon for both dry and wet oxidation. Care was taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of CoSi2 does not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.91 and 2.01 eV (±0.1 eV), respectively. For wet oxidation, activation energies for parabolic and linear growth were found to be 1.75 and 1.68 eV (±0.1 eV), respectively. The activation energy of the parabolic rate constant is substantially different from those obtained previously. The difference is attributed to the occurrence of islanding during oxidation in the previous study. A comparison of oxidation kinetics of CoSi2, NiSi2, TiSi2 on silicon with pure silicon substrates indicated that the oxidation kinetics are practically the same for CoSi2 and NiSi2 in the parabolic growth regime, but substantially different from those of TiSi2 on silicon and pure silicon. The similarity in oxidation kinetics of cubic CaF2 structure CoSi2 and NiSi2 on silicon with small mismatches to silicon is correlated to essentially the same stress level in these two silicides during the oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358462
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Transmission electron microscope study of the crystal structures and microstructures of ZrSi and HfSi in ultrahigh vacuum deposited metal thin films on (111)Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 278-284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both conventional and high resolution transmission electron microscopy have been applied to study the crystal structures and microstructures of ZrSi and HfSi formed in the interfacial reactions of metal thin films on (111)Si. Both CrB and FeB type monosilicides were observed to form. The theoretically predicted and measured values of lattice parameters were found to be very close. A number of planar defects were detected to be present in ZrSi and HfSi. The textured growth of both monosilicides is explained in terms of preferential growth of these silicides along specific directions of silicon substrates which can be derived from the crystal structures and matching of atomic structures between silicides and silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357141
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Formation of polycrystalline silicon grains in Si+-preamorphized, BF+2-implanted (111)Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3631-3635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The regrowth of Si+-preamorphized and BF+2- implanted thin films on (111)Si has been studied by both plan-view and cross-sectional transmission electron microscopy. Polycrystalline Si grains were found to form in Si+-preamorphized and BF+2- implanted (111)Si with the original amorphous-crystalline (a-c) interface located deeper in the preamorphized Si substrate than in BF+2- implanted samples. Rapid thermal annealing was performed to obtain kinetic data for the formation of polycrystalline Si grains. The nucleation and growth of polycrystalline Si grains were found to occur in the amorphous phase ahead of the growing a-c interface. The incubation time for the formation of 4 nm or larger crystallites in amorphous Si at 700 °C was found to be less than 30 s. The results are discussed in terms of the competition between the propagation of the a-c interface to sweep over the potential nucleation sites and random nucleation in the amorphous phase. Ramifications of the formation of polycrystalline Si grains in instances with a relatively low ion dosage and/or moderate annealing temperature are addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342611
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2778-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing have been studied by scanning and transmission electron microscopy as well as Auger electron spectroscopy. Backsputtering cleaning of the silicon substrates was found to be effective in alleviating the island formation and in promoting the epitaxial growth. Auger depth profiles indicated that intermixing of Ti and Si occurred in samples with substrates cleaned by in situ backsputtering prior to depositions. High-resolution lattice images of cross-sectional samples revealed the presence of continuous amorphous layers between polycrystalline Ti grains and single-crystal Si substrates in the backsputtering-cleaned samples. An amorphous silicon capping layer was found to degrade the surface morphology and hinder the formation of silicide epitaxy. The formation and growth of epitaxial regions are more difficult in samples with amorphous silicon capping layer since an additional step is required for the polycrystalline grains in the upper layer to realign with the underlying epitaxial TiSi2 layer to form an epitaxial region. Better surface morphology is correlated with improved silicide epitaxy with its more favorable energetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340977
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of IrSi3 on (111) and (001) silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1163-1167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to the study of interfacial reactions of iridium thin films on silicon with particular emphasis on the epitaxial growth of IrSi3 on (111) and (001)Si. The formation of precursor phases, IrSi and IrSi1.75, were found to occur mainly in the temperature ranges of 300–500 and 600–900 °C, respectively. The stable IrSi3 was found to grow epitaxially on (111) and (001)Si annealed at 1000–1100 °C. There are three dominant modes of epitaxial IrSi3 on (111)Si and one dominant mode of epitaxial IrSi3 on (001)Si. Interface structures of these different epitaxial modes were determined by diffraction contrast analysis. The quality of IrSi3 epitaxy in terms of the fraction of the silicon surface coverage, size, and the regularity of the interfacial dislocations was found to be the best in (111) samples annealed at 1000 °C. Epitaxial regions of IrSi3, as large as 40 μm in size, were observed on (111)Si. No direct correlation between lattice match and quality of epitaxy could be found. The Burgers vectors of edge-type dislocations for several modes of silicide epitaxy were found to be along the directions with larger lattice mismatches in agreement with a theory by Markov and Milchev [Surf. Sci. 136, 519 (1984)]. A superlattice structure of IrSi3 was found from diffraction pattern analysis. The superlattice structure was determined to be of hexagonal structure and has a unit cell with dimensions three times larger than that reported for IrSi3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340024
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of ReSi2 on (111) and (001) silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 461-465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ReSi2 has been grown locally on (111) and (001)Si. The best epitaxy was obtained in samples after two-step annealing at 500–1100 °C. In (111) samples, the orientation relationships were analyzed to be [110]ReSi2//[111]Si and (002)ReSi2//(2¯02)Si. About 70% in areal fraction of the epitaxial regions were found to be pseudomorphic. In (001) samples, two different modes of epitaxial silicides were observed: [110]ReSi2//[001]Si and (1¯10)ReSi2//(22¯0)Si (mode A') and [110]ReSi2//[001]Si and (1¯12¯)ReSi2//(220)Si (mode B'). About 40% and 60% in areal fractions of the mode A' and mode B' epitaxial ReSi2 regions, respectively, were found to be pseudormorphic. The apparent insensitivity of the quality of the ReSi2 epitaxy to the lattice matches at silicide/silicon interfaces at room temperature may be explained in part by the considerable changes in lattice mismatches at the growth temperature arising from the substantial difference in thermal expansion coefficients between the ReSi2 overlayer and the substrate silicon. The results are in agreement with a theory which predicts that orientations with negative mismatches are favored for epitaxial growth over orientations with positive mismatches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339795
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Partial epitaxial growth of HfSi2 films grown on silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2393-2395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial HfSi2 has been grown locally on (001)Si. In samples annealed in one step at 1100 °C or in two steps at 450–1100 °C, islands of HfSi2 of 0.8 μm in average grain size were found to cover about 40% of the surface area. About 70% of the disilicide in areal fraction was found to be epitaxial silicide, 0.6–1.2 μm in size. The orientation relationships between epitaxial HfSi2 and (001)Si substrate were analyzed to be [010]HfSi2(parallel)[001]Si and (002)HfSi2(parallel)(220)Si (with about 1° misorientation). Interfacial dislocations, 75 A(ring) in average spacing, were identified to be of edge type with 1/2〈110〉 Burgers vectors. No HfSi2 epitaxy was found to form on (111)Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337955
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of MoSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1518-1524 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336458
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of WSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3481-3488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336818
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...