ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP,up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2,energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ionmass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K -HP results in a formation of buried nano-structured layers containing helium filled cavities/bubblesand numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treatedunder HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and ofimplantation-induced defects and thus promotes the creation of more but smallerHe-filled cavities/bubbles as well as other defects near the range of implanted He+
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/22/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.114.285.pdf
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