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  • 11
    Electronic Resource
    Electronic Resource
    Quantum Well Optical Devices and Materials (1993)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 23 (1993), S. 79-123 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.23.080193.000455
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  • 12
    Electronic Resource
    Electronic Resource
    Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0〈x〈1) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3110-3111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall factor for holes in relaxed p-type Si1−xGex alloys has been determined from mobility measurements at magnetic fields up to 7 T at 290 K. Our data together with previously published values for Si and Ge suggest that r for holes in SiGe varies between 0.73 and 1.7 with a possible strong bowing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111363
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  • 13
    Electronic Resource
    Electronic Resource
    Suppression of defect propagation in semiconductors by pseudomorphic layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3800-3804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice-matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer can therefore prevent the defect from propagating across in and entering the critical active region of a device. Experimentally, the photoluminescence intensities of Al0.4Ga0.6As/GaAs quantum wells with and without pseudomorphic In0.2Ga0.8As layers for prevention of defect propagation have been compared. GaAs substrates of high etch pit density were used to generate defects below the quantum well and silicon implantation was used to generate defects above it. The elevated temperatures during molecular-beam-epitaxial growth and postimplant rapid thermal annealing serve to assist in defect propagation in the respective regions of the heterostructure. The structures with pseudomorphic In0.2Ga0.8As layers consistently showed much higher quantum-well photoluminescence intensities than those without the pseudomorphic layers. These results indicate smaller defect densities in the quantum wells with pseudomorphic layers and strongly support the defect propagation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354472
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  • 14
    Electronic Resource
    Electronic Resource
    Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5014-5016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured electron and hole impact ionization coefficients in biaxially strained InxGa1−xAs/InyAl1−yAs (0.44≤x≤0.62, 0.44≤y≤0.62) multiquantum wells for the first time. It is seen that β/α is enhanced due to strain-induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by considering band-to-band impact ionization and band-edge discontinuity impact ionization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353822
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  • 15
    Electronic Resource
    Electronic Resource
    Raman scattering by optical phonons in In1−y−zAlyGazAs lattice matched to InP (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1652-1653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on Raman scattering by longitudinal optical phonons in In1−y−zAlyGazAs (1−y−z=0.53) lattice matched to InP. The quaternary alloys were grown on (001) InP by molecular beam epitaxy. The phonon spectra exhibit three-mode behavior. The frequencies of AlAs- and GaAs-like modes vary linearly with the concentration of Al (or Ga) while the position of the InAs-like phonon remains nearly constant. The data show no evidence of alloy clustering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100441
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  • 16
    Electronic Resource
    Electronic Resource
    Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2055-2057 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the distribution of group III metals at In0.53Ga0.47As/In0.52Al0.48As interfaces before and after annealing at 1085 K. We find little evidence for Al interdiffusion, but the Ga concentration profiles show some broadening on annealing. Also, the originally nearly constant In profiles develop strong modulations with near discontinuities at the original interfaces. This phenomenon is explained and modeled in terms of In diffusion in the chemical potential gradient established by the disparity of the Al and Ga mobilities and the requirement of III-V stoichiometry in the alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99579
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  • 17
    Electronic Resource
    Electronic Resource
    An orthopyroxene–biotite geothermometer and its application in crustal granulites and mantle-derived rocks (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of metamorphic geology 8 (1990), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Using the experimental data on Fe–Mg exchange between orthopyroxene and biotite of Fonarev & Konilov (1986), an orthopyroxene–biotite geothermometer is developed. The thermometer is corrected for mixing of Ti and Al in octahedral sites in biotite and also for non-ideal mixing of Fe and Mg in orthopyroxene. The thermometer is applied to several amphibolite–granulite transition facies and granulite facies rocks and also to mantle xenoliths. It yields consistent results in rocks of widely varying bulk composition, and highly magnesian mantle xenoliths. This thermometer removes the difficulty of estimating temperature in garnet-free rocks in high-grade terrains and also provides independent estimates of temperature in garnet-bearing assemblages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1525-1314.1990.tb00465.x
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  • 18
    Electronic Resource
    Electronic Resource
    ON THE ELECTROMAGNETIC RESPONSE OF CONDUCTORS IN THE INDUCTIVE METHOD OF PROSPECTING (MODEL STUDIES) (1966)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 14 (1966), S. 0 
    Details
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: In the inductive method of prospecting, information on conductivity and size of conducting ore-bodies located in non-conducting host rocks, can be conveniently obtained by studying amplitude-frequency relation or amplitude-phase relation of their response with the help of suitable Master-curves. Experiments carried out in the laboratory on the scale-model method show these Master-curves to be different depending on the type of primary excitation and the shape of conductor. Cases of sphere, plate and disc in uniform field, field of line source and dipole field have been studied with an Amplitude-Phase Meter specially constructed in the laboratory for this purpose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2478.1966.tb02249.x
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  • 19
    Electronic Resource
    Electronic Resource
    ON THE ELECTROMAGNETIC RESPONSE OF CONDUCTORS IN THE INDUCTIVE METHOD OF PROSPECTING (MODEL STUDIES) (1966)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 14 (1966), S. 0 
    Details
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: In the inductive method of prospecting, information on conductivity and size of conducting ore-bodies located in non-conducting host rocks, can be conveniently obtained by studying amplitude-frequency relation or amplitude-phase relation of their response with the help of suitable Master-curves. Experiments carried out in the laboratory on the scale-model method show these Master-curves to be different depending on the type of primary excitation and the shape of conductor. Cases of sphere, plate and disc in uniform field, field of line source and dipole field have been studied with an Amplitude-Phase Meter specially constructed in the laboratory for this purpose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2478.1966.tb02062.x
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  • 20
    Electronic Resource
    Electronic Resource
    Donor-doping characteristics of gas-source molecular beam epitaxial Si and Si1−xGex using phosphine (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2213-2215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well-behaved and reproducible n-type doping of Si and Si1−xGex by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017–1019 cm−3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The doping profiles are well defined in both Si and Si1−xGex layers. A p-Si0.9Ge0.1/n-Si heterojunction diode made with boron and phosphine doping has demonstrated excellent rectifying characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357636
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